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DT 3

The document discusses the fabrication and testing of power devices like diodes and thyristors. It describes the methodology used which includes the various processes involved in fabrication like resistivity measurement, crystal orientation, laser cutting, diffusion, oxidation, photolithography, etching, and alloying. It then explains the tests conducted on the fabricated devices like forward voltage drop test, stability test, and leakage test. The results of these tests are also presented. Applications of diodes and thyristors in various fields are discussed along with the advantages of these power devices.

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4PS20EE018Kruthik Gowda
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9 views

DT 3

The document discusses the fabrication and testing of power devices like diodes and thyristors. It describes the methodology used which includes the various processes involved in fabrication like resistivity measurement, crystal orientation, laser cutting, diffusion, oxidation, photolithography, etching, and alloying. It then explains the tests conducted on the fabricated devices like forward voltage drop test, stability test, and leakage test. The results of these tests are also presented. Applications of diodes and thyristors in various fields are discussed along with the advantages of these power devices.

Uploaded by

4PS20EE018Kruthik Gowda
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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PES COLLEGE OF ENGINEERING, MANDYA - 571401

(An Autonomous Institution Affiliated to VTU, Belgaum)

Project Report
On
“FABRICATION AND TESTING OF
POWER DEVICES - DIODE AND THYRISTOR”
Submitted in Partial Fulfillment towards the Project work of 8th semester of
BACHELOR OF ENGINEERING
IN
ELECTRICAL AND ELECTRONICS ENGINEERING

Submitted By
AYESHA SIDDIQA 4PS20EE005
BHOOMIKA A S 4PS20EE006
DAJIED KYNSAI SUSNGI 4PS20EE009
JEEVAN G R 4PS20EE016

Under the Guidance of


Dr. S GOPIYA NAIK
Professor,
Department of Electrical and Electronics Engineering
PES COLLEGE OF ENGINEERING, MANDYA - 571401

2023-2024
TABLE OF CONTENTS

1. INTRODUCTION......................................................................................... 1
1.1 INTRODUCTION............................................................................................... 2
1.2 LITERATURE SURVEY................................................................................... 5
1.3 OBJECTIVES.......................................................................................................9

2. METHODOLGY......................................................................................... 10
2.1 BLOCK DIAGRAM OF FABRICATION PROCESS...................................... 11
2.1.1 RESISTIVITY MEASUREMENT............................................................12
2.1.2 CRYSTAL ORIENTATION..................................................................... 12
2.1.3 LASER CUTTING.................................................................................... 13
2.1.4 DIFFUSION.............................................................................................. 13
2.1.5 OXIDATION.............................................................................................15
2.1.6 PHOTOLITHOGRAPHY..........................................................................15
2.1.7 UV - EXPOSING...................................................................................... 16
2.1.8 ETCHING..................................................................................................17
2.1.9 PHOSPHROUS DIFFUSION.....................................................................18
2.1.10 ALLOYING............................................................................................ 19
2.1.11 BEVELING............................................................................................. 19
2.1.12 ENCAPSULATION.................................................................................21

3. TESTING OF DIODE AND THYRISTOR..................................................................22


3.1 FORWARD VOLTAGE DROP TEST............................................................. 23
3.2 STABILITY TEST............................................................................................27
3.3 LEAKAGE TEST.............................................................................................. 28
4. TEST RESULTS......................................................................................... 30

5. APPLICATIONS AND ADVANTAGES................................................. 36


5.1 APPLICATIONS.............................................................................................. 37
5.2 ADVANTAGES............................................................................................... 41

6. CONCLUSIONS......................................................................................... 42
6.1 CONCLUSIONS.............................................................................................. 43
6.2 REFERENCES................................................................................................. 44
LIST OF FIGURES

2.1.11 BLOCK DIAGRAM..................................................................................11


2.1.12 CRYSTAL ORIENTATION.......................................................................12
2.1.13 LASER CUTTING MACHINE....................................................................13
2.1.14 VISUAL REPRESENTATION OF RAW SILICON WAFER.....................13
2.1.15 AMPOULE PUMP STAND........................................................................ 14
2.1.16 PENETRATION OF IMPURITIES.............................................................. 14
2.1.17 OXIDATION............................................................................................. 15
2.1.18 PHOTO RESIST COATING........................................................................16
2.1.19 UV-EXPOSING......................................................................................... 16
2.1.20 DEVELOPING PROCESS........................................................................... 16
2.1.21 OXIDE ETCHING PROCESS......................................................................17
2.1.22 RESIST REMOVAL.................................................................................... 17
2.1.23 PHOSPHROUS DIFFUSION....................................................................... 18
2.1.24 GOLD DIFFUSION..................................................................................... 18
2.1.25 ALLOYING COMPONENTS AND PROCESS............................................ 19
2.1.26 BEVEL LAPPING MACHINE..................................................................... 20
2.1.27 BEVEL LAPPED THYRISTOR AND DIODE............................................. 21
3.1.1 V-I CHARACTERISTICS OF DIODE............................................................24
3.1.2 V-I CHARACTERISTICS OF THYRISTOR.................................................. 25
3.1.3 FORWARD VOLTAGE DROP TEST EXPERIMENTAL SETUP.................26
3.2.1 STABILITY TEST EXPERIMENTAL SETUP.............................................. 27
3.3.1 LEAKAGE TEST EXPERIMENTAL SETUP................................................ 28
4.1 BHdL-12 DIODE OUTLINE DIAGRAM........................................................ 32
4.2 BHtL-35 THYRISTOR OUTLINE DIAGRAM................................................. 34
5.1.1 TRACTION APPLICATION IN RAILWAYS................................................ 37
5.1.2 APPLICATION OF DIODE IN BRUSHLESS EXCITATION........................38
5.1.3 APPLICATION OF THYRISTOR IN VARIABLE FREQUENCY DRIVES...39
5.1.4 APPLICATION OF THYRISTOR IN HIGH CURRENT RECTIFIERS.......... 40

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