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19FY2ES02T

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19FY2ES02T

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Registration No: -

Total Number of Pages: 04 Course: B.Tech


Sub Code:19FY2ES02T

2nd Semester Regular/Back Examination: 2020-21


SUBJECT NAME:BASIC ELECTRONICS ENGINEERING
BRANCH:CE,CSE,ECE,EE,EEE,ME,IT
Time: 3 Hours
Max Marks: 100
Q Code:G082
Answer Question No.1 (Part-1) which is compulsory, any EIGHT from Part-II and any TWO from
Part-III.
The figures in the right hand margin indicate marks.
Part-I
Q No. CO Level
Q1
Short Answer Type Questions (Answer All-10) (02x10)

1 3 Determine levels of reverse saturation current at temperature of 350 C 2


a) 0
for a junction which has IO =30 nA at 25 C.

b) 3 1 State Demorgan’s Theorem. 2


c) 1 2 What is the source of leakage current in transistor? 2
Differentiate between sum of Product and product of sum term by a 2
d) 3 2
suitable example

e) 1 1 Define maximum power level rating w.r.t. transistors. 2


What do you mean by voltage-controlled device and current 2
f) 1 3
controlled device?
Explain why open loop op-amp configurations are not used in linear 2
g) 2 2
applications.

Write the duality of the Boolean expression given below. 2


h) 3 3
X+YZ= (X+Y). (X+Z)
The CMRR of a differential amplifier is 55 dB. If its gain in 2
i) 2 3 differential mode (Ad) is 1200 then calculate its gain in common
mode?
Except the constructional details what is the difference between the 2
j) 1 2
JFET and D-type MOSFET.

Part-II
Q No. CO Level
Q2
Focused-Short Answer Type Questions- (Answer Any Eight out of (06x08)
Twelve)
Show that ripple factor of half wave rectifier is 1.21 and maximum 6
a) 1 1
efficiency is 40.5 %.

Find the expression for the output of the figure shown. 6

b) 3 3

Solve the following circuits for V0. 6

c) 1 3

What do you mean by limits of operation in BJT? Define saturation 6


d) 1 2
and cut off regions of BJT.
For a circuit diagram shown in figure, Si transistor with β = 50 is used. 6
Draw dc load line and determine the operating point.

e) 1 3

Why is the input impedance to a JFET so high? Why the terminology 6


f) 1 3 field effect appropriate for this important three-terminal device. Why
IG is effectively 0 A for a JFET?

Draw the logic diagram for the function given by 6


g) 3 3
F  ABC  ABC  (C  D)( D  E )
h) 2 2 Write the six ideal characteristics of an op-amp. 6
Derive the expression for the stability factor S for a common emitter 6
i) 1 2
configuration. What is it’s ideal value ?
Minimize The following expression by using Boolean rules 6
j) 1 2 i. AB + ̅ C +BC =AB + ̅ C
ii. (A+B) ( ̅ ) (B+C) = (A+B) ( ̅ +C)
Explain Drain and transfer characteristics of n-channel depletion type 6
k) 1 2
MOSFET.
l) 3 2 Implement XOR gate using NAND gate. 6

Part-III
Q No. CO Level

Long Answer Type Questions (Answer Any Two out of Four) (02x16)

Calculate the emitter current in the voltage divider circuit shown in 8


Figure. Also find the value of VCE and collector potential VC.

Q3 a) 1 3

A full wave bridge rectifier with a 120 V rms sinusoidal input has a 8
load resistor of 1k
i. If Silicon diodes are employed what is the dc voltage
available at load?
b) 1 3
ii. Determine the required PIV rating of each diode.
iii. Find the maximum current through each diode during
conduction.
iv. What is the required power rating of each diode?

Explain construction, operation, characteristics of n-channel JFET. 8


Q4 a) 1 2
i. A JFET has a IDSS= 8 mA and Vp= -4.5V find VGSat ID= 3 8
and 5.5 mA
b) 1 3
ii. For an n-channel FET IDSS= 5.8 mA ,VP= -3V and VGS = -
2V. Find ID, gm.
i. Explain Common-Emitter configuration in BJTs. 8

Q5 a) 1 1 ii. Define ICBO, and ICEO, How are they different. Are they
typically close in magnitude?
i. Given an of 0.998, determine if = 5mA. 8

b) 1 2 ii. Determine if = 2.8 mA and IB= 20 .


iii. What is the major difference between a bipolar and a
unipolar device?
iv. Which of the transistor current is always the largest?
Which is always smallest? Which two currents are
relatively close in magnitude?
Derive the gain of a closed loop differential amplifier. 8
Q6 a) 2 2

Find out the magnitude of the output voltage and draw the output 8
wave form of the signal obtained.

b) 1 3

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