SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

General Description Pin Configuration

The SLG59H1013V is a high-performance 13.3 mΩ NMOS RSET IOUT

load switch designed to control 12 V or 24 V power rails up to
3.5 A. Using a proprietary MOSFET design, the ON 1 18 17 16 CAP
SLG59H1013V achieves a stable 13.3 mΩ RDSON across a
GND 2 15 FAULT
wide input voltage range. In combining novel FET design and

SLG59H1013V
copper pillar interconnects, the SLG59H1013V package also GND 3 14 SEL
exhibits a low thermal resistance for high-current operation.
VIN 4 13 VOUT
Designed to operate over a -40 °C to 125 °C range, the
SLG59H1013V is available in a low thermal resistance, VIN 5 12 VOUT
RoHS-compliant, 1.6 x 3.0 mm STQFN package. VIN 6 11 VOUT

Features VIN 7 8 9 10 VOUT

• Wide Operating Input Voltage: 12 V or 24 V
VIN VOUT
• Maximum Continuous Current: 3.5 A
• Automatic nFET SOA Protection 18-pin STQFN
• 5 W SOA Protection Threshold 1.6 x 3.0 mm, 0.40mm pitch
• High-performance MOSFET Switch
Low RDSON: 13.3 mΩ at VIN = 24 V (Top View)
Low ΔRDSON/ΔVIN: < 0.05 mΩ/V
Low ΔRDSON/ΔT: < 0.06 mΩ/°C
• Pin-selectable 12V/24V Input Overvoltage Applications
and Undervoltage Lockout • Power-Rail Switching
• Capacitor-adjustable Inrush Current Control • Multifunction Printers
• Two stage Current Limit Protection: • Large-format Copiers
Resistor-adjustable Active Current Limit • Telecommunications Equipment
Internal Short-circuit Current limit • High-performance Computing
• Open Drain FAULT Signaling 12 V and 24 V Point-of-Load Power Distribution
• MOSFET Current Analog Output Monitor: 10 µA/A • Motor Drives
• Fast 4 kΩ Output Discharge
• Pb-Free / Halogen-Free / RoHS Compliant Packaging

Block Diagram and 3 A Typical Application Circuit

24 V ±5%
3A VIN VOUT CLOAD = C5 + C6

CIN= C1 + C2 + C3 C5 C6
47 µF 22 µF
C1 C2 C3 Charge
47 µF 22 µF 0.1 µF Pump 3 V FS - Connect
IOUT to System ADC
CAP Linear Ramp Control
RIOUT CIOUT
CSLEW
RSET 84.5 kΩ 180 pF
10 nF
VLOGIC RSET
State Machine VLOGIC
30.1 kΩ
RPU (CL/SC Detection and
10 kΩ SEL Over Temperature RPU
27 V OVLO Protection) 100 kΩ
24 V VIN 20.5 V UVLO
Lockout Selected Connect to
ON ON
CMOS Input
FAULT System GPI
Discharge
OFF
GND

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 1 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Pin Description
Pin # Pin Name Type Pin Description
A low-to-high transition on this pin initiates the operation of the SLG59H1013V’s state machine.
ON is an asserted HIGH, level-sensitive CMOS input with ON_VIL < 0.3 V and ON_VIH > 0.9 V. As
1 ON Input the ON pin input circuit does not have an internal pull-down resistor, connect this pin to a
general-purpose output (GPO) of a microcontroller, an application processor, or a system controller,
do not allow this pin to be open-circuited.
2 GND GND Pin 2 is a low-current GND terminal for the SLG59H1013V. Connect directly to Pin 3.
Pin 3 is the main ground connection for the SLG59H1013V’s internal charge pump, its gate driver
3 GND GND and current-limit circuits as well as its internal state machine. Therefore, use a short, stout
connection from Pin 3 to the system’s analog or power plane.
VIN supplies the power for the operation of the SLG59H1013V, its internal control circuitry, and the
drain terminal of the nFET load switch. With 5 pins fused together at VIN, connect a 47 μF (or
4-8 VIN MOSFET
larger) low-ESR capacitor from this pin to ground. Capacitors used at VIN should be rated at 50 V
or higher.
Source terminal of n-channel MOSFET (5 pins fused for VOUT). Connect a 47 μF (or larger)
9-13 VOUT MOSFET low-ESR capacitor from this pin to ground. Capacitors used at VOUT should be rated at 50 V or
higher.
As a low logic-level CMOS input with SEL_VIL < 0.3 V and SEL_VIH > 1.65 V, SEL selects one of
two undervoltage/overvoltage lockout windows. When SEL = LOW, the VIN
14 SEL Input undervoltage/overvoltage lockout window is set for 12 V ±10% applications. When SEL = HIGH,
the VIN undervoltage/overvoltage lockout window is set for 24 V ± 5% applications. See the
Electrical Characteristics table for additional information.
An open drain output, FAULT is asserted within TFAULTLOW when a VIN undervoltage, VIN
overvoltage, a current-limit, or an over-temperature condition is detected. FAULT is deasserted
15 FAULT Output
within TFAULTHIGH when the fault condition is removed. Connect an 100 kΩ external resistor from
the FAULT pin to local system logic supply.
A low-ESR, stable dielectric, ceramic surface-mount capacitor connected from CAP pin to GND
sets the VOUT slew rate and overall turn-on time of the SLG59H1013V. For best performance, the
16 CAP Output range for CSLEW values are 10 nF ≤ CSLEW ≤ 20 nF – please see typical characteristics for additional
information. Capacitors used at the CAP pin should be rated at 10 V or higher. Please consult
Applications Section on how to select CSLEW based on VOUT slew rate and loading conditions.
IOUT is the SLG59H1013V’s power MOSFET load current monitor output. As an analog current
output, this signal when applied to a ground-reference resistor generates a voltage proportional to
the current through the n-channel MOSFET. The IOUT transfer characteristic is typically 10 μA/A
17 IOUT Output
with a voltage compliance range of 0.5 V ≤ VIOUT ≤ 4 V. Optimal IOUT linearity is exhibited for
0.5 A ≤ IDS ≤ 3.5 A. In addition, it is recommended to bypass the IOUT pin to GND with a 0.18 nF
capacitor.
A 1%-tolerance, metal-film resistor between 23.7 kΩ and 91 kΩ sets the SLG59H1013V’s active
18 RSET Input current limit. A 91 kΩ resistor sets the SLG59H1013V’s active current limit to 1 A and a 23.7 kΩ
resistor sets the active current limit to 4 A.

Ordering Information
Part Number Type Production Flow
SLG59H1013V STQFN 18L FC Industrial, -40 °C to 125 °C
SLG59H1013VTR STQFN 18L FC (Tape and Reel) Industrial, -40 °C to 125 °C

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 2 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Absolute Maximum Ratings

Parameter Description Conditions Min. Typ. Max. Unit
Continuous -0.3 -- 30 V
VIN to GND Load Switch Input Voltage to GND Maximum pulsed VIN, pulse
-- -- 32 V
width < 0.1 s
VOUT to GND Load Switch Output Voltage to GND -0.3 -- VIN V
ON, SEL, CAP,
ON, SEL, CAP, RSET, IOUT, and
RSET, IOUT, and -0.3 -- 7 V
FAULT Pin Voltages to GND
FAULT to GND
TS Storage Temperature -65 -- 150 °C
ESDHBM ESD Protection Human Body Model 2000 -- -- V
ESDCDM ESD Protection Charged Device Model 500 -- -- V
MSL Moisture Sensitivity Level 1
1.6 x 3.0 mm 18L STQFN;
Determined with the device
θJA Thermal Resistance -- 40 -- °C/W
mounted onto a 1 in2, 1 oz.
copper pad of FR-4 material
Continuous Current from VIN to
MOSFET IDSCONT TJ < 150 °C -- -- 3.5 A
VOUT
Maximum pulsed switch current,
MOSFET IDSPEAK Peak Current from VIN to VOUT -- -- 6 A
pulse width < 1 ms
Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Electrical Characteristics
12 V ≤ VIN ≤ 24 V; CIN = 47 µF, TA = -40 °C to 125 °C, unless otherwise noted. Typical values are at TA = 25 °C

Parameter Description Conditions Min. Typ. Max. Unit

VIN Operating Input Voltage 10.8 -- 25.2 V
VIN ↑; SEL = HIGH 25.3 27 28.5 V
VIN(OVLO) VIN Overvoltage Lockout Threshold
VIN ↑; SEL = LOW 13.3 13.7 14.5 V
VIN Undervoltage Lockout VIN ↓; SEL = HIGH 19.5 20.5 21.5 V
VIN(UVLO)
Threshold VIN ↓; SEL = LOW 9.7 10.2 10.7 V
IQ Quiescent Supply Current ON = HIGH; IDS = 0 A -- 0.5 0.65 mA
ISHDN OFF Mode Supply Current ON = LOW; IDS = 0 A -- 1 15 µA
TA = 25 °C; IDS = 0.1 A -- 13.3 14.5 mΩ
RDSON ON Resistance TA = 85 °C; IDS = 0.1 A -- 17 18.5 mΩ
TA = 125 °C; IDS = 0.1 A -- 20 21.5 mΩ
MOSFET IDS Current from VIN to VOUT Continuous -- -- 3.5 A
Active Current Limit, IACL VOUT > 0.5 V; RSET = 30.1 kΩ 2.7 3.19 3.5 A
ILIMIT
Short-circuit Current Limit, ISCL VOUT < 0.5 V -- 0.5 - A
TACL Active Current Limit Response Time RSET = 51.6 kΩ -- 120 -- µs
RDISCHRG Output Discharge Resistance 3.5 4.4 5.3 kΩ

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 3 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Electrical Characteristics (continued)

12 V ≤ VIN ≤ 24 V; CIN = 47 µF, TA = -40 °C to 125 °C, unless otherwise noted. Typical values are at TA = 25 °C

Parameter Description Conditions Min. Typ. Max. Unit

MOSFET Current Analog Monitor IDS = 1 A 9 10 11 µA
IOUT
Output IDS = 3 A 27 30 33 µA
IOUT Response Time to Change in CIOUT = 180 pF;
TIOUT -- 45 -- µs
Main MOSFET Current Step load 0 to 2.4 A; 0% to 90% IOUT
CLOAD Output Load Capacitance CLOAD connected from VOUT to GND -- 47 -- µF
50% ON to 10% VOUT ↑;
VIN = 12 V; CSLEW = 10 nF; 480 600 720 µs
RLOAD = 100 Ω, CLOAD = 10 µF
TON_Delay ON Delay Time
50% ON to 10% VOUT ↑;
VIN = 24 V; CSLEW = 10 nF; 0.76 0.95 1.2 ms
RLOAD = 100 Ω, CLOAD = 10µF
50% ON to 90% VOUT ↑ Set by External CSLEW1 ms
50% ON to 90% VOUT ↑;
VIN = 12 V; CSLEW = 10 nF; 2.9 3.6 4.3 ms
TTotal_ON Total Turn ON Time RLOAD = 100 Ω, CLOAD = 10 µF
50% ON to 90% VOUT ↑;
VIN = 24 V; CSLEW = 10 nF; 5.7 7.1 8.5 ms
RLOAD = 100 Ω, CLOAD = 10 µF
10% VOUT to 90% VOUT ↑ Set by External CSLEW1 V/ms
VOUT(SR) VOUT Slew rate 10% VOUT to 90% VOUT ↑;
VIN = 12 V or 24 V; CSLEW = 10 nF; 2.6 3.2 3.9 V/ms
RLOAD = 100 Ω, CLOAD = 10 µF
50% ON to VOUT Fall Start ↓;
TOFF_Delay OFF Delay Time VIN = 12 V or 24 V; -- 15 -- µs
RLOAD = 100 Ω, No CLOAD
90% VOUT to 10% VOUT;
ON = HIGH-to-LOW;
TFALL VOUT Fall Time 9 13.5 18 µs
VIN = 12 V or 24 V;
RLOAD = 100 Ω, No CLOAD
Abnormal Step Load Current event to
TFAULTLOW FAULT Assertion Time FAULT↓; IACL = 1 A; VIN = 24 V; -- 80 -- µs
RSET = 91 kΩ; switch in 20 Ω load
Delay to FAULT↑ after fault condition
TFAULTHIGH FAULT De-assertion Time is removed; IACL = 1 A; VIN = 24 V; -- 180 -- µs
RSET = 91 kΩ; switch out 20 Ω load
FAULTVOL FAULT Output Low Voltage IFAULT = 1 mA -- 0.2 -- V
ON_VIH ON Pin Input High Voltage 0.9 -- 5 V
ON_VIL ON Pin Input Low Voltage -0.3 0 0.3 V
SEL_VIH SEL pin Input High Voltage 1.65 -- 4.5 V
SEL_VIL SEL pin Input Low Voltage -0.3 -- 0.3 V
ION(Leakage) ON Pin Leakage Current 1 V ≤ ON ≤ 5 V or ON = GND -- -- 1 µA
Thermal Protection Shutdown
THERMON -- 150 -- °C
Threshold
Thermal Protection Restart
THERMOFF -- 125 -- °C
Threshold
Notes:
1. Refer to typical Timing Parameter vs. CSLEW performance charts for additional information.

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 4 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

TTotal_ON, TON_Delay and Slew Rate Measurement

ON*
50% ON 50% ON

TOFF_Delay

90% VOUT 90% VOUT

VOUT TON_Delay

10% VOUT 10% VOUT

VOUT(SR) (V/ms)
TFALL

TTotal_ON

*Rise and Fall Times of the ON Signal are 100 ns

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 5 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Typical Performance Characteristics

RDSON vs. Temperature and VIN

IACL vs. Temperature and RSET

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 6 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

IACL vs. RSET and VIN

IOUT vs. MOSFET IDS and VIN

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 7 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

IOUT vs. Temperature and MOSFET IDS

VOUT Slew Rate vs. Temperature, VIN, and CSLEW

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 8 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

TTotal_ON vs. CSLEW, VIN, and Temperature

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 9 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Timing Diagram - Basic Operation including Active Current Limit Protection

HIGH

VIN

LOW
Time

ON

TRISE
HIGH 90%
TON_Delay
VOUT
10%
Abnormal Step Load
Current Event
IACL IACL

IDS Active Current Limit

Operation
ISCL ISCL

FAULT TFAULTLOW TFAULTHIGH

ACL Threshold Triggered Nominal Steady State

Operation Resumes

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 10 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Timing Diagram - Active Current Limit & Thermal Protection Operation

HIGH

VIN

LOW
Time

Nominal Steady State

ON Operation Resumes

TTotal_ON Thermal Protection

Active Current Limit
Operation Operation
TRISE
90%
TON_Delay
VOUT
10%
Abnormal Step Load
Current Event
IACL IACL

IDS
ISCL ISCL

FAULT TFAULTLOW TFAULTHIGH

Die temp > THERMON Die temp < THERMOFF

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 11 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Timing Diagram - Basic Operation including Active Current + Internal FET SOA Protection

HIGH

VIN

LOW
Time

ON

ACL Threshold Triggered

Decreasing RLOAD drops VOUT
TRISE
HIGH 90% SOA
TON_Delay Threshold
VOUT

10%
Abnormal Step Load Active Current Limit
Operation
Current Event
IACL IACL
SOA
Protection

IDS
ISCL ISCL

0.2s

FAULT TFAULTLOW TFAULTHIGH

ACL Threshold Triggered Nominal Steady State

Operation resumes once
overload condition is Automatic restart after
removed 0.2s “cool off” delay
and normal operation
FET SOA Threshold resumes if overload
Triggered and FET is condition is removed
turned off

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 12 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

SLG59H1013V Application Diagram

Figure 1. Test setup Application Diagram

Typical Turn-on Waveforms

Figure 2. Typical Turn ON operation waveform for VIN = 12 V, CSLEW = 10 nF, CLOAD = 10 μF, RLOAD = 100 Ω

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 13 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Figure 3. Typical Turn ON operation waveform for VIN = 12 V, CSLEW = 18 nF, CLOAD = 10 μF, RLOAD = 100 Ω

Figure 4. Typical Turn ON operation waveform for VIN = 24 V, CSLEW = 10 nF, CLOAD = 10 μF, RLOAD = 100 Ω

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 14 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Figure 5. Typical Turn ON operation waveform for VIN = 24 V, CSLEW = 18 nF, CLOAD = 10 μF, RLOAD = 100 Ω

Typical Turn-off Waveforms

Figure 6. Typical Turn OFF operation waveform for VIN = 12 V, CSLEW = 10 nF, no CLOAD , RLOAD = 100 Ω

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 15 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Figure 7. Typical Turn OFF operation waveform for VIN = 12V, CSLEW = 10 nF, CLOAD = 10 μF, RLOAD = 100 Ω

Figure 8. Typical Turn OFF operation waveform for VIN = 24 V, CSLEW = 10 nF, no CLOAD , RLOAD = 100 Ω

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 16 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Figure 9. Typical Turn OFF operation waveform for VIN = 24 V, CSLEW = 10 nF, CLOAD = 10 μF, RLOAD = 100 Ω

Typical ACL Operation Waveforms

Figure 10. Typical ACL operation waveform for VIN = 12 V, CLOAD = 10 μF, IACL = 1 A, RSET = 91 kΩ

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 17 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Figure 11. Thermally induced SOA shutdown for VIN = 24 V, CLOAD = 10 μF, IACL = 1 A, RSET = 91 kΩ

Typical FAULT Operation Waveforms

Figure 12. Typical FAULT assertion waveform for VIN = 24 V, CLOAD = 10 μF, IACL = 1 A, RSET = 91 kΩ, switch on 18.5 Ω load

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 18 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Figure 13. Typical FAULT de-assertion waveform for VIN = 24 V, CLOAD = 10 μF, IACL = 1 A,
RSET = 91 kΩ, switch out 18.5 Ω load

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 19 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Applications Information

High Voltage GreenFET Safe Operating Area Explained

Renesas’s High Voltage GreenFET load switches incorporate a number of internal protection features that prevents them from
damaging themselves or any other circuit or subcircuit downstream of them. One particular protection feature is their Safe
Operation Area (SOA) protection. SOA protection is automatically activated under overpower and, in some cases, under
overcurrent conditions. Overpower SOA is activated if package power dissipation exceeds an internal 5 W threshold longer than
2.5 ms. High Voltage GreenFET devices will quickly switch off (open circuit) upon overpower detection and automatically resume
(close) nominal operation once overpower condition no longer exists.

One possible way to have an overpower condition trigger SOA protection is when High Voltage GreenFET products are enabled
into heavy output resistive loads and/or into large load capacitors. It is under these conditions to follow carefully the “Safe Start-up
Loading” guidance in the Applications section of the datasheet. During an overcurrent condition, High Voltage GreenFET devices
will try to limit the output current to the level set by the external RSET resistor. Limiting the output current, however, causes an
increased voltage drop across the FET’s channel because the FET’s RDSON increased as well. Since the FET’s RDSON is larger,
package power dissipation also increases. If the resultant increase in package power dissipation is higher/equal than 5 W for
longer than 2.5 ms, internal SOA protection will be triggered and the FET will open circuit (switch off). Every time SOA protection
is triggered, all High Voltage GreenFET devices will automatically attempt to resume nominal operation after 160 ms.

Safe Start-up Condition

SLG59H1013V has built-in protection to prevent over-heating during start-up into a heavy load. Overloading the VOUT pin with
a capacitor and a resistor may result in non-monotonic VOUT ramping. In general, under light loading on VOUT, VOUT ramping
can be controlled with CSLEW value. The following equation serves as a guide:

TRISE 20
CSLEW = x 4.9 µA x
VIN 3

where
TRISE = Total rise time from 10% VOUT to 90% VOUT
VIN = Input Voltage
CSLEW = Capacitor value for CAP pin

When capacitor and resistor loading on VOUT during start up, the following tables will ensure VOUT ramping is monotonic without
triggering internal protection:

Safe Start-up Loading for VIN = 12 V (Monotonic Ramp)

Slew Rate (V/ms) CSLEW (nF)2 CLOAD (µF) RLOAD (Ω)
1 33.3 500 20
2 16.7 250 20
3 11.1 160 20
4 8.3 120 20
5 6.7 100 20

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 20 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Safe Start-up Loading for VIN = 24 V (Monotonic Ramp)

Slew Rate (V/ms) CSLEW (nF)2 CLOAD (µF) RLOAD (Ω)
0.5 66.7 500 80
1.0 33.3 250 80
1.5 22.2 160 80
2.0 16.7 120 80
2.5 13.3 100 80

Note 2: Select the closest-value tolerance capacitor.

Setting the SLG59H1013V’s Active Current Limit

RSET (kΩ) Active Current Limit (A)3
91 1
45 2
30 3
23.7 4

Note 3: Active Current Limit accuracy is ±15% over voltage range and over temperature range.

Configuring the SLG59H1013V for 12 V VIN Lockout Applications

To configure the SLG59H1013V for conditioned 12 V ±10% VIN applications is simply a matter of connecting the SEL pin to GND
as shown in Figure A. For other VIN lockout window applications, please consult Renesas for additional information.

Figure A.
12 V ±10%
3A VOUT CLOAD= C5 + C6
VIN
CIN= C1 + C2 + C3 C5 C6
47µF 22µF
C1 C2 C3 Charge
47 µF 22µF 0.1 µF
Pump 3 V FS - Connect
IOUT to System ADC
CAP Linear Ramp Control
RIOUT CIOUT
CSLEW 180 pF
RSET 84.5 kΩ
10 nF
RSET
State Machine VLOGIC
30.1 kΩ
(CL/SC Detection and
SEL
Over Temperature RPU
13.7V OVLO Protection) 100 kΩ
12 V VIN 10.2V UVLO
Lockout Selected
ON ON Connect to
CMOS Input Discharge FAULT System GPI
OFF
GND

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 21 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

24 V VIN and 12 V VIN Lockout Window Thresholds

Shown in Figure B and Figure C are the two sets of VIN overvoltage/undervoltage lockout windows – one for conditioned
24 V ±5% VIN systems and the second for conditioned 12 V ±10% VIN systems. To avoid lockout threshold collision with nominal
operation, the SLG59H1013V’s VIN(OVLO) min and VIN(UVLO) max thresholds were set 0.1 V correspondingly higher than the
system’s nominal VIN max or lower than the system’s VIN min range.
Figure B.

Figure C.

Power Dissipation
The junction temperature of the SLG59H1013V depends on different factors such as board layout, ambient temperature, and
other environmental factors. The primary contributor to the increase in the junction temperature of the SLG59H1013V is the power
dissipation of its power MOSFET. Its power dissipation and the junction temperature in nominal operating mode can be calculated
using the following equations:

PD = RDSON x IDS2

where:

PD = Power dissipation, in Watts (W)

RDSON = Power MOSFET ON resistance, in Ohms (Ω)
IDS = Output current, in Amps (A)
and

TJ = PD x θJA + TA

where:
TJ = Junction temperature, in Celsius degrees (°C)
θJA = Package thermal resistance, in Celsius degrees per Watt (°C/W)
TA = Ambient temperature, in Celsius degrees (°C)

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 22 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Power Dissipation (continued)

In current-limit mode, the SLG59H1013V’s power dissipation can be calculated by taking into account the voltage drop across
the load switch (VIN-VOUT) and the magnitude of the output current in current-limit mode (IACL):

PD = (VIN-VOUT) x IACL or
PD = (VIN – (RLOAD x IACL)) x IACL

where:
PD = Power dissipation, in Watts (W)
VIN = Input Voltage, in Volts (V)
RLOAD = Load Resistance, in Ohms (Ω)
IACL = Output limited current, in Amps (A)
VOUT = RLOAD x IACL

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 23 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Layout Guidelines:

1. Since the VIN and VOUT pins dissipate most of the heat generated during high-load current operation, it is highly recommended
to make power traces as short, direct, and wide as possible. A good practice is to make power traces with absolute minimum
widths of 15 mils (0.381 mm) per Ampere. A representative layout, shown in Figure 14, illustrates proper techniques for heat
to transfer as efficiently as possible out of the device;

2. To minimize the effects of parasitic trace inductance on normal operation, it is recommended to connect input CIN and output
CLOAD low-ESR capacitors as close as possible to the SLG59H1013V's VIN and VOUT pins;

3. The GND pin should be connected to system analog or power ground plane.

4. 2 oz. copper is recommended for high current operation.

SLG59H1013V Evaluation Board:

А High Voltage GreenFET Evaluation Board for SLG59H1013V is designed according to the statements above and is illustrated
on Figure 14. Please note that evaluation board has D_Sense and S_Sense pads. They cannot carry high currents and dedicated
only for RDSON evaluation.

Figure 14. SLG59H1013V Evaluation Board

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 24 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

ON SEL0 SEL1
GND GND GND

R6
1
2
3

1
2
3

1
2
3

1
5V1
VLOGIC IOUT/POUT PDS/CAP FAULT#

1
R5
10k

R3 C4 R4 R2 R1 C3
VLOGIC circuit 30.1k 10nF N.P. 100k 84.5k 180pF
U1
18
RSET 17
1 IOUT 16
2 ON CAP 15
3 GND FAULT 14
4 GND SEL 13
5 VIN VOUT 12 CAP Array
6 VIN VOUT 11
C1 C5 VIN VOUT
C2 C6 1 2
47uF 22u F 7 10 4 7uF 22uF
8 VIN VOUT 9 3 4
VIN VOUT 5 6
7 8
9 10
1

D_SENSE DRAIN SOURCE 1

S_SENSE
RSET Array
1 2
3 4
1
2
3
4

1
2
3
4

1
2
3
4

1
2
3
4

5 6
7 8
GND D/VIN GND S/VOUT 9 10

Figure 15. SLG59H1013V Evaluation Board Connection Circuit

Basic Test Setup and Connections

Figure 16. SLG59H1013V Evaluation Board Connection Circuit

EVB Configuration

1. Set SEL0 to GND;

2. Based on VIN voltage, set SEL1 to GND or 5 V to configure OVLO;

3. Connect oscilloscope probes to D/VIN, S/VOUT, ON, etc.;

4. Turn on Power Supply and set VIN to 12 V or 24 V;

5. Toggle the ON signal High or Low to observe SLG59H1013V operation.

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 25 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Package Top Marking System Definition

1013V Part Code

WWNNN Date Code + LOT Code

Pin 1 Identifier
ARR Assembly + Rev. Code

1013V - Part ID Field

WW - Date Code Field1
NNN - Lot Traceability Code Field1
A - Assembly Site Code Field 2
RR - Part Revision Code Field2

Note 1: Each character in code field can be alphanumeric A-Z and 0-9
Note 2: Character in code field can be alphabetic A-Z

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 26 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Package Drawing and Dimensions

18 Lead TQFN Package 1.6 x 3 mm (Fused Lead)
JEDEC MO-220, Variation WCEE

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 27 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

SLG59H1013V 18-pin STQFN PCB Landing Pattern

Note: All dimensions shown in micrometers (µm)

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 28 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Tape and Reel Specifications

Nominal Max Units Reel & Leader (min) Trailer (min) Tape Part
Package # of
Package Size Hub Size Length Length Width Pitch
Type Pins per Reel per Box Pockets Pockets
[mm] [mm] [mm] [mm] [mm] [mm]
STQFN
18L
1.6x3mm 18 1.6 x 3 x 0.55 3,000 3,000 178 / 60 100 400 100 400 8 4
0.4P FC
Green

Carrier Tape Drawing and Dimensions

Index Hole Index Hole
Pocket BTM Pocket BTM Pocket Index Hole Pocket Index Hole
Package to Tape to Pocket Tape Width
Length Width Depth Pitch Pitch Diameter
Type Edge Center
A0 B0 K0 P0 P1 D0 E F W
STQFN 18L
1.6x3mm
1.78 3.18 0.76 4 4 1.5 1.75 3.5 8
0.4P FC
Green

Refer to EIA-481 specification

Recommended Reflow Soldering Profile

Please see IPC/JEDEC J-STD-020: latest revision for reflow profile based on package volume of 2.64 mm3 (nominal). More
information can be found at www.jedec.org.

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 29 of 30 ©2022 Renesas Electronics Corporation

SLG59H1013V

A 13.3 mΩ, 3.5 A, 125 °C-Rated, Load Switch

with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output

Revision History
Date Version Change
Updated Company name and logo
2/2/2022 1.04 Added SOA Protection Threshold to Features
Fixed typos
Updated EC Table
7/22/2021 1.03
Updated EVB figure
Updated style and formatting
Updated Charts
12/12/2018 1.02 Updated Scopeshots
Added Layout Guidelines
Fixed typos
Updated VIN Max and VIN(OVLO) Min
11/2/2017 1.01
Fixed typos and formatting
5/13/2016 1.00 Production Release

Datasheet Revision 1.04 2-Feb-2022

CFR0011-120-01 Page 30 of 30 ©2022 Renesas Electronics Corporation

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