Scribd
Upload
19 views

ECE2200 Lct1 Diode

Uploaded by

dmanzo753
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
19 views

ECE2200 Lct1 Diode

Uploaded by

dmanzo753
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
You are on page 1/ 4

Lecture 1: PN JUNCTION DIODE STATIC EQUATIONS AND MODELS

A diode is a solid state two terminal device consisting of a single PN junction. Owing to
the charge carrier types existing in the “P” and “N” regions and the diffusion process
taking place across the junction, a diode possesses a special current (ID) and voltage
(VD ) relationship. Generally the relationship is non linear and a diode should be
considered as a directional device in terms of its conductivity when used in applications.
A diode offers a low resistance when VD and ID are both positive and a high resistance
when VD and ID are both negative( see fig.1).
The current and voltage equation of a diode is defined by the following exponential
equation derived from the semiconductor theory (see text Ch. 3.3) :

ID = IS[ Exp ( VD/nVT ) – 1 ] ………….1

Where, ID is the diode current .


IS = reverse saturation current of the diode . This would be the backward current when
VD is a large negative voltage. Typical range of IS , depending whither the diode is rated
as a low current or high current , is 10-18 A < IS < 10-9 A. Generally IS increases with
increasing temperature in Silicon and more in Germanium diodes
[ IS ≈ B Exp(- Eg/ nkT) , here B is a constant for the given diode and Eg is the gap energy
of the intrinsic device ; for Silicon Eg is 1.12 (eV) and for Germanium it is 0.66 eV.
Note ,1 eV= 1.602 x 10-19 J ] .

VD = Applied voltage to the diode (V)


VT = the thermal voltage (V) = kT / q …………..2
q = Electron charge ( 1.60 x 10-19 C )
k = Boltzmann’s constant ( 1.38 x 10-23 J )
T = Absolute temperature of the device ( Kelvin) , n = Nonideality factor , it has a value
between 1 to 1.1 at low currents but may approach to 2 at high current densities.

For problem solving we will take n = 1.0 and VT ≈ 25 or 26 mV around the normal room
temperature ( T= 293 to 298 K ).

From this point on equation 1 can be rewritten as:

ID = IS [ Exp ( VD / VT ) – 1 ] ….. ……….3


Where VT ≈ 25 mV and IS will be specified .

Diodes have three regions of operation ( Fig.1) . Part of the characteristic located in the
1st quadrant is called the forward region. In this region for Silicon diodes the forward
voltage( AKA knee voltage) , VF , is approximately 0.6 to 0.7 V and for Germanium
diodes it is 0.35 to 0.45 V . As the diode voltage approaches the VF the current rises very
rapidly . In the steep region the current nearly triples per every 26 mV increment of VD .
Diode equation often can be approximated with ID = IS Exp( VD / VT) once the diode
voltage exceeds 100 mV ( VD > 100 mV) .
Reverse region is in the third quadrant where VB < VD < 0 . For a reverse voltage of
VD << - 100 mV the current ID ≈ - IS which is usually very small and sometimes can be
ignored in the analysis . Here the diode’s static resistance which is defined as VD /ID can
be considered extremely high. A good approximation to the diode in terms of its role
would be as if an infinite resistance is occupying between the Cathode ( C ) and
Anode ( A ) terminals.
Breakdown region of the diode is referred to the steep region in the third quadrant . There
VD = VB and ID can be a very large reverse current. When a diode is driven into the
breakdown region, due to large power dissipation ( VDx ID = PD ) they can get
permanently damaged .The breakdown voltage , VB, is found in the datasheets and is
chosen depending upon the application . Usually the maximum anticipated reverse
voltage existing within a circuit should never exceed the breakdown voltage. In general
operation in the shaded areas (see fig.1) of the characteristics should be avoided.
A typical diode rating of 300 V/ 1 A implies that the breakdown voltage is VB = –300 V
and the maximum DC (or average) forward current is I(max) = 1 A .

ALTERATIVE SIMPLIFIED MODELS:

When a diode is incorporated in a circuit the exponential characteristic can be replaced


with piecewise linear models which will facilitate the circuit analysis with a reasonable
accuracy. Otherwise it is difficult to solve non linear equations with simple algebra.
IDEAL DIODE – In this model a diode can be considered either a short-circuit or an
open-circuit depending upon the polarity of the voltage and direction of the current
( see fig.2 a ). In the forward region VD = 0 and ID > 0 . In the reverse region VD < 0 and
ID = 0 .
CONSTANT VOLTAGE MODEL – Here accuracy is improved by considering a
constant voltage source in series with an ideal diode (see fig.2 b ) . The voltage source is
equal to VF while ID > 0 and subsequently VD = VF . The second part in the range of
VD < VF the current ID is equal to zero, ID = 0 , all the way to breakdown voltage . The
reason is although the voltage might be positive and the device might be in the forward
region , there will be no significant current in the diode up to VD ≈ VF /2 . As VD turns
negative the current will be unconditionally zero before reaching breakdown. This model
is very useful and is adequately accurate for engineering work having the breakdown
voltage in mind.

THE THIRD MODEL – This model accounts for the fact that diode voltage increases
slightly as the current rises above the knee voltage (VF) by including a series resistor. The
model consists of the ideal diode in series with the voltage source VF and in series with
an internal resistance of RD . The value of that resistance can be estimated from current
and voltage specifications. Often 1/slope of the best line that fits the rising part of the
exponential can be utilized to estimate RD (see fig.1 c)

You might also like