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Ae&i - 2

Field-effect transistors come in n-channel and p-channel types and are unipolar devices that conduct using either electrons or holes. The field-effect transistor has a much higher input impedance than bipolar junction transistors. While bipolar junction transistors have higher voltage gains, field-effect transistors are more temperature stable and smaller, making them useful for integrated circuits. Junction field-effect transistors have three terminals - a gate, drain, and source - with a channel between the drain and source that can be controlled by the gate terminal's voltage.

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29 views

Ae&i - 2

Field-effect transistors come in n-channel and p-channel types and are unipolar devices that conduct using either electrons or holes. The field-effect transistor has a much higher input impedance than bipolar junction transistors. While bipolar junction transistors have higher voltage gains, field-effect transistors are more temperature stable and smaller, making them useful for integrated circuits. Junction field-effect transistors have three terminals - a gate, drain, and source - with a channel between the drain and source that can be controlled by the gate terminal's voltage.

Uploaded by

tharun
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Field-Effect Transistor

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Just as there are npn and pnp bipolar transistors, there are n-channel and
p-channel field effect transistors. However, it is important to keep in mind that the
BJT is a bipolar device—the prefix bi indicates that the conduction level is a
function of two charge carriers, electrons and holes. The FET is a unipolar device
depending solely on either electron ( n - channel) or hole ( p -channel) conduction.
One of the most important characteristics of the FET is its high input impedance.
At a level of 1 MΩ to several hundred megohms it far exceeds the typical input
resistance levels compare to the BJT transistor configurations—a very important
characteristic in the design of linear ac amplifier systems.
On the other hand, the BJT has a much higher sensitivity to changes in the applied
signal. In other words, the variation in output current is typically more for BJTs than
for FETs for the same change in the applied volt
For this reason:
Typical ac voltage gains for BJT amplifiers are more than for FETs.
However, FETs are more temperature stable than BJTs, and FETs are usually smaller
than BJTs, making them particularly useful in integrated-circuit (IC) chips.
Construction and Characteristics of JFETs
The JFET is a three-terminal device with one terminal capable of controlling the
current between the other two. In our discussion of the BJT transistor the npn
transistor was employed through the major part of the analysis and design
sections, with a section devoted to the effect of using a pnp transistor. For the JFET
transistor the n -channel device will be the prominent device, with paragraphs and
sections devoted to the effect of using a p -channel JFET.
The basic construction of the n -channel JFET is shown in Fig. 6.3. Note that the
major part of the structure is the n -type material, which forms the channel
between the embedded layers of p -type material. The top of the n -type channel is
connected through an ohmic contact to a terminal referred to as the drain (D),
whereas the lower end of the same material is connected through an ohmic
contact to a terminal referred to as the source (S). The two p -type materials are
connected together and to the gate (G) terminal
In essence, therefore, the drain and the source are connected to the ends of the n
-type channel and the gate to the two layers of p -type material. In the absence of
any applied potentials the JFET has two p – n junctions under no-bias conditions.
The result is a depletion region at each junction, as shown in Fig. 6.3, that a
depletion region is void of free carriers and is therefore unable to support
conduction.
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p -Channel Devices
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Symbols
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Transfer Characteristics
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MOSFET (Metal Oxide Semiconductor FET)
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p-Channel Depletion-Type MOSFET
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Symbols
The graphic symbols for an n - and p -channel depletion-type MOSFET are provided
in Fig. 6.30. The lack of a direct connection (due to the gate insulation) between the
gate and the channel is represented by a space between the gate and the other
terminals of the symbol. The vertical line representing the channel is connected
between the drain and the source and is “supported” by the substrate. Two
symbols are provided for each type of channel to reflect the fact that in some cases
the substrate is externally available, whereas in others it is not.
Enhancement-Type MOSFET
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Basic Operation and Characteristics
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