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tsm4425 A09

This document provides information on the TSM4425 30V P-channel MOSFET, including its pin definition, features, applications, ordering information, maximum ratings, electrical specifications, characteristic curves, and mechanical drawings. Key specifications include a maximum drain-source voltage of -30V, continuous drain current of -11A, and on-resistance as low as 10mΩ at -10V gate-source voltage. It is suitable for applications such as load switches in notebooks, desktops, and other devices.
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0% found this document useful (0 votes)
53 views

tsm4425 A09

This document provides information on the TSM4425 30V P-channel MOSFET, including its pin definition, features, applications, ordering information, maximum ratings, electrical specifications, characteristic curves, and mechanical drawings. Key specifications include a maximum drain-source voltage of -30V, continuous drain current of -11A, and on-resistance as low as 10mΩ at -10V gate-source voltage. It is suitable for applications such as load switches in notebooks, desktops, and other devices.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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TSM4425

30V P-Channel MOSFET

SOP-8 Pin Definition: PRODUCT SUMMARY


1. Source 8. Drain
2. Source 7. Drain VDS (V) RDS(on)(mΩ) ID (A)
3. Source 6. Drain
4. Gate 5. Drain
12 @ VGS = -10V -11
-30
19 @ VGS = -4.5V -8.5

Features Block Diagram


● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance

Application
● Load Switches
● Notebook PCs
● Desktop PCs

Ordering Information

Part No. Package Packing


TSM4425CS RL SOP-8 2.5Kpcs / 13” Reel
P-Channel MOSFET

Absolute Maximum Rating (Ta = 25oC unless otherwise noted)


Parameter Symbol Limit Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID -11 A
Pulsed Drain Current IDM -50 A
a,b
Continuous Source Current (Diode Conduction) IS -2.1 A
o
Ta = 25 C 2.5
Maximum Power Dissipation o
PD W
Ta = 75 C 1.6
o
Operating Junction Temperature TJ +150 C
o
Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 C

Thermal Performance
Parameter Symbol Limit Unit
o
Junction to Foot Thermal Resistance RӨJF 18 C/W
o
Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 52.5 C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.

1/6 Version: A09


TSM4425
30V P-Channel MOSFET

Electrical Specifications (Ta = 25oC unless otherwise noted)


Parameter Conditions Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage VGS = 0V, ID = -250uA BVDSS -30 -- -- V
Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -1 -- -3 V
Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA
Zero Gate Voltage Drain Current VDS = -30V, VGS = 0V IDSS -- -- -1.0 µA
a
On-State Drain Current VDS = -5V, VGS = -10V ID(ON) -50 -- -- A
a VGS = -10V, ID = -11A -- 10 12
Drain-Source On-State Resistance RDS(ON) mΩ
VGS = -4.5V, ID = -8.5A -- 15 19
a
Forward Transconductance VDS = -15V, ID = -11A gfs -- 23 -- S
Diode Forward Voltage IS = -2.1A, VGS = 0V VSD -- -- -1.3 V
b
Dynamic
Total Gate Charge Qg -- 64 --
VDS = -15V, ID = -11A,
Gate-Source Charge Qgs -- 11 -- nC
VGS = -10V
Gate-Drain Charge Qgd -- 25 --
Input Capacitance Ciss -- 3680 --
VDS = -8V, VGS = 0V,
Output Capacitance Coss -- 930 -- pF
f = 1.0MHz
Reverse Transfer Capacitance Crss -- 620 --
c
Switching
Turn-On Delay Time td(on) -- 15 --
VDD = -15V, RL = 15Ω,
Turn-On Rise Time tr -- 13 --
ID = -1A, VGEN = -10V, nS
Turn-Off Delay Time td(off) -- 100 --
RG = 6Ω
Turn-Off Fall Time tf -- 53 --
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.

2/6 Version: A09


TSM4425
30V P-Channel MOSFET

Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)


Output Characteristics Transfer Characteristics

On-Resistance vs. Drain Current Gate Charge

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

3/6 Version: A09


TSM4425
30V P-Channel MOSFET

Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)


On-Resistance vs. Gate-Source Voltage Threshold Voltage

Single Pulse Power

Normalized Thermal Transient Impedance, Junction-to-Ambient

4/6 Version: A09


TSM4425
30V P-Channel MOSFET

SOP-8 Mechanical Drawing

SOP-8 DIMENSION
MILLIMETERS INCHES
DIM
MIN MAX MIN MAX.
A 4.80 5.00 0.189 0.196
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.054 0.068
D 0.35 0.49 0.014 0.019
F 0.40 1.25 0.016 0.049
G 1.27BSC 0.05BSC
K 0.10 0.25 0.004 0.009
M 0º 7º 0º 7º
P 5.80 6.20 0.229 0.244
R 0.25 0.50 0.010 0.019

Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code

5/6 Version: A09


TSM4425
30V P-Channel MOSFET

Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.

6/6 Version: A09

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