Department of Electrical and ECSE-330B Electronic Circuits I

Computer Engineering

Section 3
The pn Junction and Diodes

Sedra/Smith, Sections 3.1-3.7

Diodes 3.1
Department of Electrical and ECSE-330B Electronic Circuits I
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Outline of Section 3 - Diodes

• Other two terminal devices
• Diode models
• Exponential model
• Constant voltage drop model
• Reverse breakdown
• Applications
• Small-signal model
• PN junctions

Diodes 3.2
Department of Electrical and ECSE-330B Electronic Circuits I
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Resistors, Capacitors, Inductors

• Resistor: R V=IR

dv
• Capacitor: C i=c
dt
• Inductor: I di
v=l
dt
• Devices are two terminals and do not have a required
orientation.

Diodes 3.3
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Diode Symbol and Terminal Characteristics

v
anode cathode
(p) (n)

i
⎛ v
⎞
Exponential i-v relation:i = I S ⎜ e − 1⎟
nVT
⎜ ⎟
Exponential Model ⎝ ⎠
Diodes 3.4
Department of Electrical and ECSE-330B Electronic Circuits I
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Exponential Characteristic Equation

Y = (e(x) - 1)

Diodes 3.5
Department of Electrical and ECSE-330B Electronic Circuits I
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Diodes
• It is a nonlinear device
• How to model the nonlinear behavior?
– Ideal model
– Exponential model
– Constant voltage drop model
– Piecewise-linear (we don’t work with this model much, except for
Zener diode)

Diodes 3.6
Department of Electrical and ECSE-330B Electronic Circuits I
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Ideal Model
• Diode is considered to be an ideal switch
– Used for fast and approximate analysis

Diodes 3.7
Department of Electrical and ECSE-330B Electronic Circuits I
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Ideal Model Application

• Example: Simple
rectifier circuit
– We will see a
more accurate
analysis of this
circuit later

• Example: Logic
gates
– This model is
actually very
useful in analysis
of logic circuits
and is often used

Diodes 3.8
Department of Electrical and ECSE-330B Electronic Circuits I
Computer Engineering

Outline of Section 3 - Diodes

• Other two terminal devices
• Diode models
• Exponential model
• Constant voltage drop model
• Reverse breakdown
• Applications
• Small-signal model
• PN junctions

Diodes 3.9
Department of Electrical and ECSE-330B Electronic Circuits I
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I-V Characteristic of a Diode

This nonlinear i-v characteristic can be described for

most of its parts with the Exponential Model
Diodes 3.10
Department of Electrical and ECSE-330B Electronic Circuits I
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Exponential Model Definitions

⎛ nVv ⎞
Exponential Model: i = I S ⎜ e T
− 1⎟
⎜ ⎟
• IS: reverse saturation ⎝ ⎠
current • VT: Thermal Voltage
– from device physics:
– proportional to cross-sectional
area of current flow k ⋅T
VT =
– discrete Si devices: q
IS ~ 10-9-10-13 A
– k: Boltzmann constant
– IC Si devices: IS ≤ 10-15 A
(1.38x10-23 J/K)
• n: fitting parameter – T: Temperature (Kelvin)
– normally between 1 and 2 for Si – q: electron charge
– discrete Si devices: n ~ 2 (1.6x10-19 C)
– IC Si devices: n ~ 1 – At room temperature,
VT ~ 25 mV
Diodes 3.11
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Exponential Model – Forward Bias

⎛ v ⎞ When diode is fully
As V increases, exp⎜⎜ ⎟⎟ >> 1
⎝ n ⋅ VT ⎠ conducting, V remains
constant at ~ 0.7V
v for silicon diodes
i ≅ ISe nV T

• The voltage at which the

diode starts to conduct
appreciably is called the
cut-in voltage; value is ~
.5V for silicon diodes

Diodes 3.12
Department of Electrical and ECSE-330B Electronic Circuits I
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Forward Bias Analysis

v
⎛ i ⎞
i = ISe nV T
v = nV T ln ⎜⎜ ⎟⎟
⎝ IS ⎠
Consider two points on
I-V curve above cut-in
voltage: (V1, I1) and V1, I1
(V2, I2)
I2 ⎛ V2 − V1 ⎞
= exp ⎜⎜ ⎟⎟
I1 ⎝ n ⋅ VT ⎠ V2, I2
⎛ I2 ⎞
V2 − V1 = n ⋅ VT ⋅ ln ⎜⎜ ⎟⎟
⎝ I1 ⎠
Diodes 3.13
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Strong Forward Bias

• Given: a diode with n = 1 • I-V data points for n = 1
and I = 1mA at V = 0.7V and IS = 6.9x10-16A:
• Question: determine the I V Note from
voltage drop across diode 1pA 0.180V data, above
when the current flowing 10pA 0.239V 10mA, a 10X
100pA 0.297V
through the diode is increase in I
1nA 0.355V
results in only
doubled: 10nA 0.412V
a 57mV
100nA 0.470V
⎛ 2mA ⎞ increase in V
V2 − 0.7 = n ⋅ VT ⋅ ln⎜ ⎟ 1μA 0.527V
⎝ 1mA ⎠ 10μA 0.585V
100μA
V2 − 0.7 = (1)(25mV ) ln (2 )
0.642V
1mA 0.700V
10mA 0.758V
V2 = 0.717V 100mA 0.815V
Diodes 3.14
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Reverse Bias
⎛ v
⎞
i = I S ⎜ e nVT − 1⎟
• Recalling exponential model
⎜ ⎟
⎝ ⎠
• As v becomes negative,
⎛ v ⎞
⎜⎜ ⎟⎟
e ⎝ nVT ⎠
<< 1 i = −IS
• Exponential model predicts approximately constant
current under reverse bias; IC Si devices: IS ~ 10-15
• Usually, consider a reverse-biased diode to be
nonconductive; open circuit
Diodes 3.15
Department of Electrical and ECSE-330B Electronic Circuits I
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Circuit Analysis
5V Given: n = 1, IS = 6.9x10-16A
Find: I and V
5 −V
• For resistor: I = 1k
1kΩ
• For diode: I = I S exp⎛⎜ V ⎞⎟
⎜ ⎟
⎝ n ⋅ VT ⎠
I V
5 −V −16 ⎛ V ⎞
I= = 6.9 × 10 exp⎜ ⎟
1k ⎝ 25mV ⎠

• This is generally best for a circuit

simulator to solve (like SPICE)
Diodes 3.16
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Iteration
5V n = 1, IS = 6.9x10-16A Find I and V

• Iterative analysis procedure:

– Start with a guess for V ≈ 0.7 is
1kΩ diode voltage drop reasonable

– Use guess for V to get 5 −V

I=
I corresponding I 1k
V
⎛ ⎞
V = (25mV ) ln⎜
– Use I to get better I
−16 ⎟
approximation for V ⎝ 6.9 × 10 ⎠

– Repeat procedure until V

and I no longer change
Diodes 3.17
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Iteration (cont’)
n = 1, IS = 6.9x10-16A Find I and V
5V
5 − 0.700
• Iteration #1 I= = 4.300mA
1k
(V = 0.7V) ⎛ 4.300m ⎞
V = (25m ) ln⎜ −16 ⎟
= 0.737V
⎝ 6 .9 × 10 ⎠
1kΩ 5 − 0.737
• Iteration #2 I= = 4.263mA
1k
(V = 0.737V) ⎛ 4.263m ⎞
I V = (25m ) ln⎜ −16 ⎟
= 0.736V
V ⎝ 6 .9 × 10 ⎠

5 − 0.736
• Iteration #3 I= = 4.264mA
1k
(V = 0.736V) ⎛ 4.264m ⎞
V = (25m ) ln⎜ −16 ⎟
= 0.736V
⎝ 6.9 × 10 ⎠

∴ I = 4.264mA, V = 0.736V
Diodes 3.18
Department of Electrical and ECSE-330B Electronic Circuits I
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Graphical Analysis

1) Plot two
relationships on the
i-v plane.
2) The solution is
the intersection of
the two graphs;
operating point

Diodes 3.19
Department of Electrical and ECSE-330B Electronic Circuits I
Computer Engineering

Outline of Section 3 - Diodes

• Other two terminal devices
• Diode models
• Exponential model
• Constant voltage drop model
• Reverse breakdown
• Applications
• Small-signal model
• PN junctions

Diodes 3.20
Department of Electrical and ECSE-330B Electronic Circuits I
Computer Engineering

The Constant Voltage Drop Model (CVDM)

• Exponential model gives
accurate results; requires
hand computation or a
simulator
• The constant voltage
drop model (CVDM)
used to perform quick
analysis of a diode
circuit by hand
V = 0.7 V
• CVDM approximates
diode I-V curve
piecewise-linearly
Diodes 3.21
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CVDM
• “Voltage” perspective of CVDM:
– V = 0.7V when diode is conducting
– V < 0.7V Ö diode is not conducting

• “Current” perspective of CVDM:

– When V = 0.7V, diode supplies whatever current
is required by the circuit
– When V < 0.7V, diode supplies no current

Diodes 3.22
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How to use CVDM to Find I and V

5V 1) Make assumptions about whether
diodes are conducting or not
2) Solve circuit:
1kΩ use 0.7V drops for conducting
diodes
treat non-conducting diodes as
I V open-circuits
3) Check validity of assumptions:
If consistent Ö DONE
If inconsistent Ö repeat with new
assumptions
Diodes 3.23
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Example 1 – Find I and V

5V
Assume that diode is conducting:

V = 0.7V
1kΩ
5 − 0 .7
I= = 4.3mA
I 1k
V

Result indicates that diode

voltage drop 0.7V and diode
current is 4.3 mA – acceptable.
Diodes 3.24
Department of Electrical and ECSE-330B Electronic Circuits I
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Example 2 - Find V1, V2, ID1 and ID2

5V Assume that both diodes are
conducting
ID1 D1
V1 = 5 − 0.7 = 4.3V
D2
V1 V2 V2 − V1 = 0.7 ⇒ V2 = 5V
ID2
0 − V2 − 5
1kΩ 2kΩ I D2 = = = − 2.5mA
2k 2k

Results not consistent for D2

Diodes 3.25
Department of Electrical and ECSE-330B Electronic Circuits I
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New Assumptions
5V Assume that D1 is conducting
and that D2 is not conducting
ID1 D1
V1 = 5 − 0.7 = 4.3V
D2
I D2 = 0 A
V1 V2

ID2 V2 = 0V
1kΩ 2kΩ V1 − 0
I D1 = = 4.3mA
1k
Results are acceptable
Diodes 3.26
Department of Electrical and ECSE-330B Electronic Circuits I
Computer Engineering

Example 3 - Find V1, V2, ID1 and ID2

5V Assume both D1 and D2 conducting
V2 = −5 + 0.7 = − 4.3V
1kΩ V1 = V2 + 0.7 = − 3.6V
V1 5 − V1 5 + 3.6
I D1 = = = 8.6mA
D1 1k 1k
V2 0.7
IR = = 14mA
50
IR 50Ω D2
I D 2 = I D1 − I R = − 5.4mA

-5V Results not consistent for D2

Diodes 3.27
Department of Electrical and ECSE-330B Electronic Circuits I
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New Assumptions
Assume D1 on, D2 off
5V
5 − V1 V2 + 5
I D1 = I R = =
1k 50
1kΩ V1 − V2 = 0.7V
V1 5 − (V2 + 0.7 ) V2 + 5
= ⇒ V2 = − 4.557V
D1 1k 50
V1 = − 3.857V
V2 5 − V1
I D1 = = 8.857 mA
1k
IR 50Ω D2
Check D2: V2 + 5 = 0.443V < 0.7V → D 2 off

-5V Results acceptable

Diodes 3.28
Department of Electrical and ECSE-330B Electronic Circuits I
Computer Engineering

Outline of Section 3 - Diodes

• Other two terminal devices
• Diode models
• Exponential model
• Constant voltage drop model
• Reverse breakdown
• Applications
• Small-signal model
• PN junctions

Diodes 3.29
Department of Electrical and ECSE-330B Electronic Circuits I
Computer Engineering

Reverse-Breakdown Region – Characteristics

• Point on I-V curve -IZK
where breakdown
occurs called Zener
knee (-VZK, -IZK)
• Zener diodes designed
specifically for
operation in reverse-
breakdown. -VZK

• This means that they IZ

can handle large
currents, hence they are
physically larger. VZ
Diodes 3.30
Department of Electrical and ECSE-330B Electronic Circuits I
Computer Engineering

Reverse-Breakdown Region – Modeling

• Model for Zener diode: • Typical Zener application :
voltage regulation
I I VZ0 -VZ0

rZ
Slope = 1/rZ

• Slope of I-V curve in

reverse-breakdown
region very steep; rZ
very small
Diodes 3.31
Department of Electrical and ECSE-330B Electronic Circuits I
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Zener Example
Question: given a
Zener Diode with
VZ0 = 5.5V and an I
incremental resistance
of rz=40Ω, calculate
the output voltage VO. VO

IZ

Diodes 3.32
Department of Electrical and ECSE-330B Electronic Circuits I
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Example (cont’)
1) Replace Zener with model
2) Perform circuit analysis by
solving for I in the network:
I
VS = IR1 + VZ 0 + IrZ
10 = I (200) + 5.5 + I (40)
VO
⇒ I = 18.75mA
IZ
3) Compute Vo:
VO = VS − IR1 = 10 − (18.75mA)(200)
⇒ VO = 6.25V
Diodes 3.33