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Power Eectronics Lab Manual#09

This lab handout describes experiments to characterize a unijunction transistor (UJT) and use it to trigger a silicon controlled rectifier (SCR). The objectives are to: 1) Verify the UJT's characteristic curve experimentally; and 2) Use a UJT in a typical trigger circuit to activate an SCR. The handout provides background on UJTs, including their construction and characteristic curves. It then outlines procedures to plot the UJT's emitter characteristics and use it in a relaxation oscillator to pulse the SCR gate. Measurements of voltage waveforms at different points in the circuits are to be recorded.
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0% found this document useful (0 votes)
55 views

Power Eectronics Lab Manual#09

This lab handout describes experiments to characterize a unijunction transistor (UJT) and use it to trigger a silicon controlled rectifier (SCR). The objectives are to: 1) Verify the UJT's characteristic curve experimentally; and 2) Use a UJT in a typical trigger circuit to activate an SCR. The handout provides background on UJTs, including their construction and characteristic curves. It then outlines procedures to plot the UJT's emitter characteristics and use it in a relaxation oscillator to pulse the SCR gate. Measurements of voltage waveforms at different points in the circuits are to be recorded.
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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LAB Handout No.

09 EE-408117

EE–408117 Power Electronics Lab

LAB No: 09
TO INVESTIGATE THE CHARECTRISTICS OF UJT AND
ITS APPLICATION AS SCR TRIGGRING SOURCE

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LAB Handout No. 09 EE-408117

Objective:
1. Experimently verify characteristic curve of UJT
2. To use a unijunction transistor (UJT) as the trigger device for an SCR by using a
typical UJT-SCR circuit.
Apparatus Required:

1. SCR
2. UJT
2. Diode
3. Multimeter
4. Resistor / Capacitor
5. DC power supplly

Introduction
The Unijunction Transistor (UJT)
Although a unijunction transistor is not a thyristor, this device can trigger larger
thyristors with a pulse at base B1. A unijunction transistor is composed of a bar of N-
type silicon having a P-type connection in the middle. See Figure below(a). The
connections at the ends of the bar are known as bases B1 and B2; the P-type mid-point is
the emitter. With the emitter disconnected, the total resistance RBBO, a datasheet item, is
the sum of RB1 and RB2 as shown in Figure below(b). RBBO ranges from 4-12kΩ for
different device types. The intrinsic standoff ratio η is the ratio of RB1 to RBBO. It varies
from 0.4 to 0.8 for different devices. The schematic symbol is Figure below(c)

Unijunction transistor: (a) Construction, (b) Model, (c) Symbol

The Unijunction emitter current vs voltage characteristic curve (Figure below(a) )


shows that as VE increases, current IE increases up IP at the peak point. Beyond the peak
point, current increases as voltage decreases in the negative resistance region. The

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LAB Handout No. 09 EE-408117

voltage reaches a minimum at the valley point. The resistance of RB1, the saturation
resistance is lowest at the valley point.
IP and IV, are datasheet parameters; For a 2n2647, IP and IV are 2µA and 4mA,
respectively. VP is the voltage drop across RB1 plus a 0.7V diode drop; see
Figure below(b). VV is estimated to be approximately 10% of VBB.

Unijunction transistor: (a) emitter characteristic curve, (b) model for VP .

The relaxation oscillator in Figure below is an application of the unijunction oscillator.


RE charges CE until the peak point. The unijunction emitter terminal has no effect on
the capacitor until this point is reached. Once the capacitor voltage, VE, reaches the
peak voltage point VP, the lowered emitter-base1 E-B1 resistance quickly discharges
the capacitor. Once the capacitor discharges below the valley point VV, the E-RB1
resistance reverts back to high resistance, and the capacitor is free to charge again.

Unijunction transistor relaxation oscillator and waveforms. Oscillator drives SCR.

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LAB Handout No. 09 EE-408117

During capacitor discharge through the E-B1 saturation resistance, a pulse may be seen
on the external B1 and B2 load resistors, Figure above. The load resistor at B1 needs to
be low to not affect the discharge time. The external resistor at B2 is optional. It may be
replaced by a short circuit. The approximate frequency is given by 1/f = T = RC. A
more accurate expression for frequency is given in Figure above.
The charging resistor RE must fall within certain limits. It must be small enough to
allow IP to flow based on the VBB supply less VP. It must be large enough to supply
IV based on the VBB supply less VV. The equations and an example for a 2n2647:

Procedure
PART-A

R1 R2

470 470
X1

2N2646 V2
5Vdc
V1
0Vdc

Connect the circuit as shown in diagram

To plot the emitter characteristics proceed as follows:

2. Set V2 at constant voltages V2=5V

3. DC sweep V1 (0 , 10 , .2)

4. Run the simulation and get the graph V1 vs VE and show it.

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LAB Handout No. 09 EE-408117

5. Note Vpeak= -------------------- and find η= ----------------


6. Plot the graph of VE versus IE and show it. It should look like its characteristic curve.

7. Set V2 at constant voltages V2=10V and repeat step 3 to 6

8. Set V2 at constant voltages V2=15V and repeat step 3 to 6

PART B
1. Connect the circuit as per given diagram

2. Set VBB=20V, C= .1uF and R=20k

3. Observe the waveform at two terminal of UJT (VB1, VE) separately and Paste them in
the report. Expected waveforms are shown here.

4. Note:
Vpeak=----------------- Vvalley=------------------Tperiod=------------------ F=--------

5. Observe the waveform at two terminal of UJT (VB1, VE) in the same trace window
simultaneously.

R1 R2
20k 100

V1
20v dc
X1

2N2646

C1
.1u R3
20

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LAB Handout No. 09 EE-408117

6. Connect the circuit as per given diagram


7. Set V2 amplitude and frequency as shown
8. Observe the voltage waveform across the R3, C1 and RLoad separately and paste them
in the report.

9. Note:
Alpha angle of output α=---------------
10. Observe the voltage waveform across the R3, C1 and RLoad in the same trace
window simultaneously.

RLoad

1k
V+ V-

R1 R2
20k 100

V1
V2 20v dc
VOFF = 0 X1
VAMPL = 24
FREQ = 536.6534 V+ X2
AC = 2N2646 2N1595

V+

C1
.1u R3
20

V- V-
0

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