Power Eectronics Lab Manual#09
Power Eectronics Lab Manual#09
09 EE-408117
LAB No: 09
TO INVESTIGATE THE CHARECTRISTICS OF UJT AND
ITS APPLICATION AS SCR TRIGGRING SOURCE
Objective:
1. Experimently verify characteristic curve of UJT
2. To use a unijunction transistor (UJT) as the trigger device for an SCR by using a
typical UJT-SCR circuit.
Apparatus Required:
1. SCR
2. UJT
2. Diode
3. Multimeter
4. Resistor / Capacitor
5. DC power supplly
Introduction
The Unijunction Transistor (UJT)
Although a unijunction transistor is not a thyristor, this device can trigger larger
thyristors with a pulse at base B1. A unijunction transistor is composed of a bar of N-
type silicon having a P-type connection in the middle. See Figure below(a). The
connections at the ends of the bar are known as bases B1 and B2; the P-type mid-point is
the emitter. With the emitter disconnected, the total resistance RBBO, a datasheet item, is
the sum of RB1 and RB2 as shown in Figure below(b). RBBO ranges from 4-12kΩ for
different device types. The intrinsic standoff ratio η is the ratio of RB1 to RBBO. It varies
from 0.4 to 0.8 for different devices. The schematic symbol is Figure below(c)
voltage reaches a minimum at the valley point. The resistance of RB1, the saturation
resistance is lowest at the valley point.
IP and IV, are datasheet parameters; For a 2n2647, IP and IV are 2µA and 4mA,
respectively. VP is the voltage drop across RB1 plus a 0.7V diode drop; see
Figure below(b). VV is estimated to be approximately 10% of VBB.
During capacitor discharge through the E-B1 saturation resistance, a pulse may be seen
on the external B1 and B2 load resistors, Figure above. The load resistor at B1 needs to
be low to not affect the discharge time. The external resistor at B2 is optional. It may be
replaced by a short circuit. The approximate frequency is given by 1/f = T = RC. A
more accurate expression for frequency is given in Figure above.
The charging resistor RE must fall within certain limits. It must be small enough to
allow IP to flow based on the VBB supply less VP. It must be large enough to supply
IV based on the VBB supply less VV. The equations and an example for a 2n2647:
Procedure
PART-A
R1 R2
470 470
X1
2N2646 V2
5Vdc
V1
0Vdc
3. DC sweep V1 (0 , 10 , .2)
4. Run the simulation and get the graph V1 vs VE and show it.
PART B
1. Connect the circuit as per given diagram
3. Observe the waveform at two terminal of UJT (VB1, VE) separately and Paste them in
the report. Expected waveforms are shown here.
4. Note:
Vpeak=----------------- Vvalley=------------------Tperiod=------------------ F=--------
5. Observe the waveform at two terminal of UJT (VB1, VE) in the same trace window
simultaneously.
R1 R2
20k 100
V1
20v dc
X1
2N2646
C1
.1u R3
20
9. Note:
Alpha angle of output α=---------------
10. Observe the voltage waveform across the R3, C1 and RLoad in the same trace
window simultaneously.
RLoad
1k
V+ V-
R1 R2
20k 100
V1
V2 20v dc
VOFF = 0 X1
VAMPL = 24
FREQ = 536.6534 V+ X2
AC = 2N2646 2N1595
V+
C1
.1u R3
20
V- V-
0