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2SD1391 STMicroelectronics Datasheet

The SD1391 is a gold metallized NPN planar transistor designed for use as a low power, high gain driver in UHF base station applications operating at 470 MHz. It is specified to provide a minimum of 15W of output power with 11dB of gain when operated in Class AB mode from a 24V supply with 50% minimum efficiency. Key electrical specifications including gain, output power, efficiency and input/output impedance are provided over the operating frequency range. A test circuit schematic and packaging details are also included.

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83 views

2SD1391 STMicroelectronics Datasheet

The SD1391 is a gold metallized NPN planar transistor designed for use as a low power, high gain driver in UHF base station applications operating at 470 MHz. It is specified to provide a minimum of 15W of output power with 11dB of gain when operated in Class AB mode from a 24V supply with 50% minimum efficiency. Key electrical specifications including gain, output power, efficiency and input/output impedance are provided over the operating frequency range. A test circuit schematic and packaging details are also included.

Uploaded by

giambi-1
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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SD1391

RF & MICROWAVE TRANSISTORS


UHF BASE STATION APPLICATIONS

.. 470 MHZ
P RELIMINARY DATA

.. 24 VOLTS
EFFICIENCY 50% MIN.

.. POUT = 15 W WITH 11.0 dB MIN. GAIN


CLASS AB
COMMON EMITTER

.2 30 x .3 60 6LF L (M1 4 2)

O R DE R CODE BRANDING
SD1391 SD1391

PIN CONNECTION

DESCRIPTION
The SD1391 is a gold metallized NPN planar tran-
sistor using diffused emitter ballast resistors for
reliability and ruggedness.
The SD1391 is specifically designed as a low
power, high gain driver and can be operated in 1. Collector 3. Emitter
Class A, B or C. 2. Base

ABSOLUTE MAXIMUM RATINGS (T case = 25° C)


Symbol Parameter Value Un it
VCBO Collector-Base Voltage 48 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 3.5 V
IC Collector Current 2.5 A
PDISS Power Dissipation (+25°C) 29 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature − 65 to +150 °C

THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 6.0 °C/W

August 23, 1996 1/5


SD1391

ELECTRICAL SPECIFICATIONS (T case = 25° C)

STATIC
Va lu e
S ym bo l Te s t C o n ditio n s Un it
Min. Typ . Ma x.
BVCBO IC = 50 mA IE = 0 mA 48 — — V
BVCEO IC = 20 mA IB = 0 mA 25 — — V
BVEBO IE = 5 mA IC = 0 mA 3.5 — — V
ICBO VC B = 24 V IE = 0 mA — — 1.0 mA
hFE VC E = 10 V IC = 0.1 A 10 — 100 —

DYNAMIC
Va lu e
S ym bo l T e s t Co n d itio ns Un it
Min. T yp . Ma x.
POUT f = 470 MHz PIN = 6.3 W VCC = 24V ICQ = 50 mA 15 — — W
ηC f = 470 MHz PIN = 6.3 W VCC = 24V ICQ = 50 mA 50 60 %
RTL f = 470 MHz PIN = 6.3 W VCC = 24V ICQ = 50 mA 10 — dB
COB f = 1 MHz VCB = 24 V — — 24 pF

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SD1391

POWE R GAIN vs FREQUENCY EFFICIENCY vs FREQUENCY

OUTPUT POW ER vs INPUT POWE R INPUT RETURN LOS S vs FREQUENCY

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SD1391

TEST CIRCUIT

C1 : 2200pf Chip Capacitor L1 : 50 ohms microstrip line, L = 6mm


C2 : 22pf Chip Capacitor + 2-10pf Trim Capacitor L2 : 50 ohms microstrip line, L = 19mm
C3 : 2 x 33pf + 2-22pf Trim Capacitor L3 : 50 ohms microstrip line, L = 25mm
L4 : 50 ohms microstrip line, L = 14mm
C5 : 8.2pf + 2-10pf Trim Capacitor L5 : 50 ohms microstrip line, L = 20mm
C6 : 330pf Chip Capac itor L6 : 50 ohms microstrip line, L = 7.5mm
C7,C8 :1nF + 10nF + 100nF + 10mF L7 : 50 ohms microstrip line, L = 8.5mm
L8,L9 : 5 Turns, ID = 33mm, 0.5mm Wire diameter

Board Material: Teflon H = 30mils, Er = 2.55

IMPEDANCE DATA

TYP ICAL INP UT


IMP E DANC E
ZIN
FREQ. ZIN(Ω) Z CL(Ω)
420 MHz 4.0 + j 2.2 7.2 + j 1.0
450 MHz 5.4 + j 3.9 6.8 + j 3.0
470 MHz 4.9 + j 5.7 6.6 + j 4.3
TYP ICAL C OLLEC TOR LOAD
IMP E DANCE
ZCL

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SD1391

PACKAGE MECHANICAL DATA

Ref.: Dwg. No. 12-0142 rev. C


UDC S No. 1010968

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously
supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1996 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia -
Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan -
Thailand - United Kingdom - U.S.A.

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