ISTS150, ISTS832S, ISTS832SD

ISTS250, ISTS822S, ISTS822SD

TRANSMISSIVE OPTO-ELECTRONIC DUAL

CHANNEL SLOTTED INTERRUPTER
SWITCHES WITH TRANSISTOR SENSORS

17.8 24.2 1 Dimensions in mm

3.2
DIA 2
E PLCS E

11.4 11.5 11.4 11.5

2.54 5.4 2.54
2.8 2.8
7.9 7.9 10.4
10.4
7.4 7.4 10.0
10.0
OPTICAL OPTICAL
0.45 CENTRE 0.45 CENTRE
0.40 LINE 0.40 LINE

7.62 2.54 2.8 7.62 2.54 2.8

1 8

ISTS250 2 7 ISTS150
ISTS822S 3 6 ISTS832S
ISTS822SD 4 5 ISTS832SD
DESCRIPTION
This series of photointerrupters are dual ABSOLUTE MAXIMUM RATINGS
channel switches consisting of two Gallium (25°C unless otherwise specified)
Arsenide infrared emitting diodes and two NPN
silicon photo transistors mounted in a "side by Storage Temperature -40°C to + 85°C
side" configuration on opposite sides of a 2.5mm Operating Temperature -25°C to + 85°C
wide slot. Dual channels enable direction of Lead Soldering Temperature
travel sensing. The transmissive housing reduces (1/16 inch (1.6mm) from case for 10 secs) 260°C
possible interference from ambient light and
provides dust and dirt protection. In addition the INPUT DIODE
ISTS822S, ISTS832S have 0.25mm apertures in
front of the phototransistors, While the Forward Current 50mA
ISTS822SD, ISTS832SD have the same sized Reverse Voltage 5V
apertures in front of both emitters and Power Dissipation 75mW
phototransistors

FEATURES OUTPUT TRANSISTOR

l Single or Double apertures for High Resolution
l 2.5mm Gap between LED and Detector Collector-emitter Voltage BVCEO 30V
l Dual channels "side by side" Emitter-collector Voltage BVECO 5V
Collector Current IC 20mA
APPLICATIONS Power Dissipation 75mW
l Copiers, Printers, Facsimilies, Record
Players, Cassette Decks, VCR's

ISOCOM COMPONENTS LTD ISOCOM INC

Unit 25B, Park View Road West, 720 E., Park Boulevard, Suite 104,
Park View Industrial Estate, Brenda Road Plano, TX 75074 USA
Hartlepool, Cleveland, TS25 1YD Tel: (972) 423-5521
Tel: (01429) 863609 Fax :(01429) 863581 Fax: (972) 422-4549

24/9/97 DB92003-AAS/A1
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.6 V IF = 20mA

Reverse Voltage (VR) 3 V IR = 10µA
Reverse Current (IR) 10 µA VR = 3V

Output Collector-emitter Breakdown (BVCEO) 30 V IC = 1mA

( Note 1 )

Emitter-collector Breakdown (BVECO) 5 V IE = 100µA

Collector-emitter Dark Current (ICEO) 100 nA VCE = 10V

Coupled On-State Collector Current IC ( ON )

( Note 1 )
ISTS150, ISTS250 250 µA 20mA IF , 10V V CE
( no apertures )

ISTS822S, ISTS832S 250 µA 20mA IF , 10V VCE

(0.25mm apertures phototransistors only)

ISTS822SD, ISTS832SD 100 µA 20mA IF , 10V V CE

( 0.25mm apertures in front of both -
- emitters and phototransistors )

Collector-emitter Saturation VoltageVCE(SAT)

ISTS150, ISTS250 0.4 V 20mA IF , 125µA IC

ISTS822S, ISTS832S 0.4 V 20mA IF , 125µA IC

ISTS822SD, ISTS832SD 0.4 V 20mA IF , 50µA IC

Rise Time tr 6 µs VCC = 5V,

Fall Time tf 6 µs IF = 20mA, RL= 100Ω

Note 1 Special Selections are available on request. Please consult the factory.

24/9/97 DB92003-AAS/A1
Collector Power Dissipation vs. Ambient Temperature Normalized Output Current vs.
Collector-emitter Voltage
100 10
Collector power dissipation PC (mW)

4 IF = 50mA
2

Normalized output current

75 30mA
1 20mA

0.4 10mA
50 0.2 5mA
0.1 Normalized to
IF = 20mA
25 0.04 VCE = 10V
Pulsed
0.02 PW = 100µs
TA = 25°C
0.01 PRR = 100pps
0
-25 0 25 50 75 100 125 0.1 1 10 100
Ambient temperature TA ( °C ) Collector-emitter voltage VCE ( V )

Forward Current vs. Ambient Temperature Normalized Output Current vs.

Forward Current
60 2.0
Normalized to T A = 25°C
1.8 IF = 20mA
50 1.6 VCE = 0.4V
Normalized output current
Forward current IF (mA)

Pulsed
1.4 PW = 100µs
40
1.2 PRR = 100pps

30 1.0
0.8
20 0.6

10 0.4
0.2
0 0
-25 0 25 50 75 100 125 1 2 5 10 20 50
Ambient temperature TA ( °C ) Forward current IF (mA)

Normalized Output Current Collector-emitter Saturation

Collector-emitter saturation voltage VCE(SAT) (V)

vs. Ambient Temperature Voltage vs. Ambient Temperature

0.28
1.5 0.24
IF = 20mA IF = 20mA
Normalized output current

VCE = 10V 0.20 IC = 50µA

1.0 0.16

0.12

0.5 0.08

0.04

0 0
-25 0 25 50 75 100 -25 0 25 50 75 100
Ambient temperature TA ( °C ) Ambient temperature TA ( °C )

24/9/97
DB92003AAS/A1