Topological Insulators With Inversion Symmetry
Topological Insulators With Inversion Symmetry
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A. Time-reversal polarization ends correspond to the inner and outer surfaces. This system
In Ref. 22, we introduced the concept of the time-reversal can be threaded by two independent magnetic fluxes, and
polarization, in the same spirit as charge polarization. This they correspond to the two components of the momentum
allows for an interpretation of the Z2 invariants using a perpendicular to G. There are four time-reversal invariant
Laughlin-type gedanken experiment on a cylinder.26 In the surface momenta ⌳a, corresponding to the two fluxes being
ordinary quantum Hall effect, the Chern invariant can be either 0 or h / 2e. The band structure can be characterized by
interpreted in a similar way. To motivate the time-reversal the difference in the time-reversal polarization between any
polarization, we therefore begin with a discussion of the pair.
charge polarization. The Z2 invariants can be deduced from the topological
The charge polarization determines the surface charges structure of the Bloch wave functions of the bulk crystal in
present in a finite system. Since electrons may be added or the Brillouin zone. Consider a time-reversal invariant peri-
removed from a surface, the charge polarization is defined odic Hamiltonian H with 2N occupied bands characterized
only modulo an integer.27–30 However, changes in the charge by Bloch wave functions
polarization induced by adiabatic changes in the Hamiltonian 兩n,k典 = eik·r兩un,k典. 共2.1兲
are well defined. In Laughlin’s gedanken experiment for the
integer quantum Hall effect, a quantum of magnetic flux h / e Here, 兩un,k典 are cell periodic eigenstates of the Bloch Hamil-
is adiabatically inserted in a cylindrical quantum Hall sample tonian
at filling = N. The resulting transfer of N electrons from one
end of the cylinder to the other can be interpreted as a change H共k兲 = e−ik·rHe+ik·r . 共2.2兲
in the charge polarization of the cylinder. The Chern invari-
ant, which characterizes the integer quantum Hall state, pre- We require 兩n,k+G典 = 兩n,k典 for reciprocal-lattice vectors G,
cisely characterizes this quantized change in charge polariza- so that the Brillouin zone in which k is defined is a torus.
tion. This implies 兩un,k+G典 = e−iG·r兩un,k典. Time-reversal symmetry
The time-reversal polarization is a Z2 quantity, which implies 关H , ⌰兴 = 0, where ⌰ = exp共iSy兲K is the time-
characterizes the presence or absence of a Kramers degen- reversal operator 共Sy is spin and K complex conjugation兲,
eracy associated with a surface. Like the charge polarization, which for spin 1 / 2 particles satisfies ⌰2 = −1. It follows that
its value can be changed by adding an extra electron to the H共−k兲 = ⌰H共k兲⌰−1.
surface. Thus, by itself, the time-reversal polarization is not There are special points k = ⌫i in the Brillouin zone which
meaningful. However, changes in the time-reversal polariza- are time-reversal invariant and satisfy −⌫i = ⌫i + G for a
tion due to adiabatic changes in the bulk Hamiltonian are reciprocal-lattice vector G. There are eight such points in
well defined. Specifically, the change in the time-reversal three dimensions and four in two dimensions. At these
polarization when half a flux quantum h / 2e is threaded points, H共⌫i兲 = ⌰H共⌫i兲⌰−1, so that the eigenstates are Kram-
through a cylinder defines a Z2 invariant, which is analogous ers degenerate. In the following, it will be useful to use two
to the Chern invariant, and distinguishes topological insula- different notations to label the distinct ⌫i. 共1兲 The eight 共or
tors. four兲 ⌫i can be indexed by three 共or two兲 integers nl = 0 , 1
defined modulo 2, which specify half a “mod 2 reciprocal-
lattice vector,”
B. Z2 invariants characterizing a band structure
The topological invariant characterizing a two- 1
⌫i=共n1n2n3兲 = 共n1b1 + n2b2 + n3b3兲, 共2.3兲
dimensional band structure may be constructed by imagining 2
a long cylinder whose axis is parallel to a reciprocal-lattice
vector G and which has a circumference of a single lattice where bl are primitive reciprocal-lattice vectors. Two mod 2
constant. Then, the magnetic flux threading the cylinder reciprocal-lattice vectors are equivalent if they differ by
plays the role of the circumferential 共or “edge”兲 crystal mo- twice a reciprocal-lattice vector. 共2兲 A second notation is use-
mentum kx, with ⌽ = 0 and ⌽ = h / 2e corresponding to two ful when considering a surface perpendicular to reciprocal-
edge time-reversal invariant momenta kx = ⌳1 and kx = ⌳2. lattice vector G. The surface time-reversal invariant mo-
The Z2 invariant characterizes the change in the Kramers menta ⌳a will be projections of pairs of ⌫i which differ by
degeneracy at the ends of this one-dimensional system be- G / 2, as shown in Fig. 1. Given G, we can define ⌫i=共a兲,
tween kx = ⌳1 and kx = ⌳2. such that ⌫a1 − ⌫a2 = G / 2.
For a three-dimensional crystal, imagine a “generalized The change in the time-reversal polarization associated
cylinder” which is long in one direction 共parallel to G兲 but, with a cylinder oriented along G due to changing the flux
in the other two directions, has a width of one lattice con- between two values corresponding to ⌳a and ⌳b can be cal-
stant with periodic boundary conditions. While this structure culated by a method analogous to the calculation of the
cannot be pictured as easily as a regular cylinder, a distorted charge polarization as a Berry’s phase.27–30 In Ref. 22, we
共but topologically equivalent兲 version can be visualized as a showed that the result is most simply expressed in terms of
torus with a finite thickness. This “Corbino donut” is analo- the quantities
gous to the generalized cylinder in the same way the Corbino
disk is analogous to the regular cylinder. The “long” direc-
冑det关w共⌫i兲兴
␦i = = ± 1, 共2.4兲
tion corresponds to the thickness of the torus, and the two Pf关w共⌫i兲兴
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FIG. 1. 共a兲 A two-dimensional cylinder threaded by magnetic flux ⌽. When the cylinder has a circumference of a single lattice constant,
⌽ plays the role of the edge crystal momentum kx in band theory. 共b兲 The time-reversal invariant fluxes ⌽ = 0 and h / 2e correspond to edge
time-reversal invariant momenta ⌳1 and ⌳2. ⌳a are projections of pairs of the four bulk time-reversal momenta ⌫i=共a兲, which reside in the
two-dimensional Brillouin zone indicated by the shaded region. 共c兲 In three dimensions, the generalized cylinder can be visualized as a
Corbino donut, with two fluxes, which correspond to the two components of the surface crystal momentum. 共d兲 The four time-reversal
invariant fluxes ⌽1, ⌽2 = 0 , h / 2e correspond to the four two-dimensional surface momenta ⌳a. These are projections of pairs of the eight
⌫i=共a兲 that reside in the bulk 3D Brillouin zone.
再 冎
共− 1兲 = 兿 ␦i .
0
共2.11兲
eik兩un,k典 for n = 1 i=1
兩un,k典 → 共2.7兲
兩un,k典 for n ⫽ 1.
The other three invariants are given by products of four ␦i’s
Under this transformation, for which ⌫i reside in the same plane.
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共− 1兲k = 兿
nk=1;n j⫽k=0,1
␦i=共n1n2n3兲 . 共2.12兲
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冉 冊
xy = n +
1 e2
2 h
. 共2.15兲
associated with the plane kz = 0. The topological invariants
will then be given by 0 = 0 and G = 共2 / a兲ẑ. This structure
will remain when weak coupling between the layers is intro-
It is interesting to ask whether such a “fractional” integer duced. More generally, quantum spin-Hall states stacked in
quantum Hall effect could be measured. Unfortunately, in a the G direction will have G = G mod 2. This implies that
standard transport experiment in which currents and voltages quantum spin-Hall states stacked along different directions
are measured by attaching leads to a sample, the 1 / 2 cannot G1 and G2 are equivalent if G1 = G2 mod 2.
be directly measured. The problem is that in a slab geometry, The surface states can also be understood in this manner.
there is no simple way to isolate the “top” surface from the When the coupling between the layers is zero, it is clear that
“bottom” surface. The two will always be measured in par- the gap in the 2D system implies that there will be no surface
allel, and the two half integers will always add up to an states on the top and bottom surfaces. On the sides, however,
integer. For such a transport experiment, there is no getting the Fermi points guaranteed that the edges of the two-
around the “fermion doubling problem.” What is required is dimensional system will become straight Fermi lines in the
a method for measuring the current on the top surface with- kz direction. The two Fermi lines will enclose two time-
out measuring the bottom surface. If it can be established reversal invariant momenta, which occur at kz = 0 and kz
that the currents are flowing on both surfaces, then dividing = / a, as in Fig. 3.
the measured Hall conductance by 2 could, in principle, Since the surface Fermi arc encloses an even number of
demonstrate the half quantization. surface time-reversal invariant momenta 共and hence an even
A lattice realization of the parity anomaly was proposed number of 2D Dirac points兲, it follows that the Berry’s phase
by Fradkin and co-workers,36,37 who studied a tight-binding associated with the Fermi arc is zero. Thus, the surface states
model for PbTe in the presence of a domain wall where the of the weak topological insulators do not enjoy the same
Pb and Te atoms are interchanged. They showed that in their level of topological protection as those of the strong topo-
model, the domain wall exhibits massless Dirac fermions and logical insulator. Below we will argue that in the presence of
has a finite Hall conductivity even at zero magnetic field. disorder, the weak topological invariants lose their meaning.
Their model, however, is rather different from ours. In the
presence of the domain wall, their Hamiltonian explicitly
violates time-reversal symmetry,4 and it leads to an even D. Z2 invariant and boundary-condition sensitivity
number of species of Dirac fermions on the domain wall. Niu et al. generalized the topological characterization of
Haldane introduced a model of the quantum Hall effect on the integer quantum Hall effect to express the Chern invari-
honeycomb lattice in a periodic magnetic field.4,38 This ant in terms of the sensitivity of the ground state of a bulk
model, which also breaks time-reversal symmetry, realizes crystal to phase twisted boundary conditions.39 This is more
the parity anomaly 共with a single Dirac fermion兲 when the fundamental than the characterization in terms of Bloch
Hamiltonian is tuned to the transition between the quantum wave functions because it does not rely on the translational
Hall phase and the insulator. In this model, however, the Hall symmetry of the crystal. It explains the topological stability
conductivity is an integer. of the Hall conductance in the presence of weak disorder. In
The surface of the strong topological insulator is thus this section, we consider a corresponding generalization of
unique in that it can generate a single Dirac fermion without the Z2 invariant.
violating time-reversal symmetry and, in principle, exhibits To do so, we consider large 共but still finite兲 crystal with
the half quantized quantum Hall effect. periodic boundary conditions in all but one direction. A
phase twist eii is associated with each periodic boundary
2. Weak topological insulator
condition. This has the same structure as the cylinder 共and
When 0 = 0, states are classified according to G. We re- generalized cylinder兲 considered in Sec. II B, but now the
fer to the states with G ⫽ 0 as weak topological insulators.15 circumferences are much larger. The fluxes now correspond
0 = 0 implies that for any surface, the associated time- to the phase twists i = ⌽ie / ប. Since the cylinder is still finite,
reversal polarizations will satisfy 1234 = + 1. This im- the discrete states associated with the ends can be character-
plies that either 共1兲 all of the a⬘s are the same or 共2兲 two will ized by their degeneracy. This allows us to characterize the
be positive and two will be negative. The former case occurs change in time-reversal polarization when the phase twists
for surfaces G = G mod 2, where G is given in Eq. 共2.13兲. are changed by . For noninteracting electrons, the invari-
For these surfaces, there are no topologically protected sur- ants characterizing a large cylinder can be deduced from the
face states. For G ⫽ G mod 2, two of the ⌳a’s are positive band-structure invariants by treating the entire sample to be a
and two negative. The Fermi arc encloses the two ⌳a’s which unit cell of an even larger crystal. It is therefore necessary to
have the same sign for a. consider the effect of enlarging the unit cell on the topologi-
These states can be interpreted as layered two- cal invariants.
dimensional quantum spin-Hall states. To see this, consider The 2D invariant is preserved when the unit cell is
two-dimensional planes in the quantum spin-Hall state enlarged. This is easiest to see by considering the effect of
stacked in the z direction. When the coupling between the doubling the unit cell on the surface spectra of Fig. 2. The
layers is zero, the electronic states will be independent of kz. effect of doubling the unit cell will be to fold the momenta
It follows that the four ␦i’s associated with the plane kz ⌳a and ⌳b back on top of each other. If after enlarging the
= / a will have product −1 and will be the same as the four unit cell we add a small random potential, which lowers the
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translational symmetry, then all “accidental” degeneracies in- version and time-reversal symmetries is that the Berry cur-
troduced by the zone folding will be lifted, while the Kram- vature F共k兲 must vanish because it must simultaneously be
ers degeneracies at the time-reversal invariant momenta will odd under time-reversal 关F共−k兲 = −F共k兲兴 and even under in-
remain. It is then clear that the manner in which the degen- version 关F共−k兲 = + F共k兲兴.17 The Berry curvature is given by
erate states at ⌳a are connected to each other is preserved ⵜk ⫻ A共k兲, where the Berry’s potential is
when the bands are folded back. Since the invariant is
2N
unchanged when the unit cell is enlarged, it may be used to
characterized the bulk system. A共k兲 = − i 兺 具un,k兩ⵜk兩un,k典, 共3.2兲
In three dimensions, the strong topological invariant 0 is n=1
also invariant under enlarging the unit cell. This can be seen where the sum is over the 2N occupied bands. The fact that
by noting that if the surface Fermi arc is folded back, the F共k兲 = 0 suggests that it is possible to choose a globally con-
number of time-reversal invariant momenta enclosed is pre- tinuous “transverse” gauge in which A共k兲 = 0. We will show
served modulo 2. The weak topological invariants k, how- that in this special gauge, the ␦i defined in Eq. 共2.4兲 are given
ever, are not preserved by this procedure. It is possible that by Eq. 共1.1兲, so the Z2 invariants can be easily evaluated.
for a Fermi arc which encloses two time-reversal invariant The transverse gauge may be explicitly constructed as fol-
momenta, the two points can be folded back on top of each lows. In an arbitrary gauge, consider the 2N ⫻ 2N matrix
other. When the two bands are coupled to each other, a gap
can then open at the Fermi energy, so that the Fermi arc can vmn共k兲 = 具um,k兩P⌰兩un,k典. 共3.3兲
disappear.
We thus conclude that the weak topological invariants are Since 具a兩b典 = 具⌰b兩⌰a典 and ⌰2 = −1, it follows that v共k兲 is
only defined for the band structure of a perfect crystal and antisymmetric. Since 关P⌰ , H共k兲兴 = 0, v共k兲 is unitary. Thus,
rely on the lattice translational symmetry. For a clean system, the Pfaffian of v共k兲 is defined and has unit magnitude. The
they have important implications for the surface-state spec- phase of Pf关v共k兲兴 depends on the gauge, and its gradient is
trum, but the topological distinction is eliminated by disor- related to A共k兲:
der. The strong topological invariant 0, however, is robust
and characterizes a bulk three-dimensional phase. i
A共k兲 = − Tr关v共k兲†ⵜkv共k兲兴 = − iⵜk log Pf关v共k兲兴.
The fragility of the weak topological invariants can also 2
be understood by considering stacked two-dimensional quan- 共3.4兲
tum spin-Hall states. If two identical quantum spin-Hall
states are coupled together, the resulting two-dimensional The first equality is derived by differentiating Eq. 共3.3兲 and
system will be a simple insulator and will not have topologi- using the unitarity of v共k兲. The second equality follows from
cally protected edge states. Thus, a stack of an even number the facts that det关v兴 = Pf关v兴2 and ⵜk log det关v兴
of layers will be equivalent to a stack of insulators, while a = Tr关ⵜk log v共k兲兴 = Tr关v†共k兲ⵜkv共k兲兴.
stack of an odd number of layers will define a 共thicker兲 2D To set A共k兲 = 0, we thus adjust the phase of 兩unk典 to make
quantum spin-Hall state. This sensitivity to the parity of the
number of layers indicates that the weak topological invari- Pf关v共k兲兴 = 1. 共3.5兲
ants do not characterize a robust three-dimensional phase
but, rather, are only properties of the band structure. This can be done, for instance, by a transformation of the
This formulation of the Z2 invariant in terms of the form of Eq. 共2.7兲, under which Pf关v共k兲兴 → Pf关v共k兲兴e−ik. In
change in the time-reversal polarization of a large system as this gauge, the problem of continuing 冑det关w共k兲兴 between
a function of twisted boundary conditions can be generalized the ⌫i in Eq. 共2.4兲 is eliminated because det关w共k兲兴 = 1 for all
to interacting systems. This suggests that the strong topologi- k. This can be seen by noting that v共k兲 has the property
cal insulator phase remains robust in the presence of weak v共−k兲 = w共k兲v共k兲*w共k兲T and using the identity Pf关XAXT兴
interactions.22 = Pf关A兴det关X兴.
All that remains for Eq. 共2.4兲 is to evaluate Pf关w共⌫i兲兴. To
III. Z2 INVARIANTS WITH INVERSION SYMMETRY this end, we note that
In this section, we show how the presence of inversion wmn共⌫i兲 = 具m,⌫i兩P共P⌰兲兩n⌫i典. 共3.6兲
symmetry greatly simplifies the evaluation of the Z2 invari-
ants. We will prove Eq. 共1.1兲, which allows topological in- Here, we have used P2 = 1, along with the antilinearity of ⌰,
sulators to be identified in a straightforward manner. which allows us to replace 兩un⌫i典 by 兩n⌫i典 = 兩n−⌫i典 in Eq.
Suppose that the Hamiltonian H has an inversion center at 共2.5兲. Since 关H , P兴 = 0, 兩n⌫i典 is an eigenstate of P with ei-
r = 0. It follows that 关H , P兴 = 0, or equivalently H共−k兲 genvalue n共⌫i兲 = ± 1. After changing 兩n⌫i典 back to 兩un⌫i典, it
= PH共k兲P−1, where the parity operator is defined by follows that
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The sign of the square root is fixed by the special case in In Secs. IV B and IV C, we will consider examples in which
which all n = 1, so that w = v. Since Pf关v兴 = 1, we conclude each unit cell consists of two sublattices 共denoted by Pauli
that in the transverse gauge, matrix z兲 which are interchanged by inversion and two spin
degrees of freedom 共denoted by sz兲. Therefore,
N
␦i = 兿 2m共⌫i兲.
m=1
共3.10兲 P̂ = x 丢 I, 共4.2兲
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ˆ ⌫ a⌰
⌰ 再
ˆ −1 = P̂⌫a P̂−1 = + ⌫ for a = 1
a
− ⌫a for a ⫽ 1.
冎 共4.6兲
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TABLE II. Parameters for diamond lattice tight-binding model, have 共n1n2n3兲 = 共100兲, 共010兲, 共001兲, and 共111兲. The 111 dis-
with xk = k · ak. tortion makes the first three L points distinct from the fourth,
which will be referred to as T.
d0 0 From Table II, we can deduce the sign of d1共k兲 and,
d1 t + ␦t1 + t关cos x1 + cos x2 + cos x3兴 hence, ␦i at these points. We find ␦i = −1 at ⌫ and the three L
d2 t关sin x1 + sin x2 + sin x3兴 points, while ␦i = + 1 at T. At the X points, ␦i = −sgn共␦t1兲.
SO关sin x2 − sin x3 − sin共x2 − x1兲 + sin共x3 − x1兲兴 Combining these, we then find that
再 冎
d3
d4 SO关sin x3 − sin x1 − sin共x3 − x2兲 + sin共x1 − x2兲兴
共1;111兲 for ␦t1 ⬎ 0
d5 SO关sin x1 − sin x2 − sin共x1 − x3兲 + sin共x2 − x3兲兴 共 0 ; 1 2 3兲 = 共4.15兲
共0;111兲 for ␦t1 ⬍ 0.
冋冖 册
When the 111 distorted bond is stronger than the other three
bonds, so that the system is dimerized, the system is a strong
exp i A共k兲 · dk = ␦1␦2␦3␦4 . 共4.13兲 topological insulator. When the 111 bond is weaker than the
1/2
other three, so that the system is layered, it is a weak topo-
Thus, if ␦1␦2␦3␦4 = −1, it would violate Stoke’s theorem and logical insulator with G = 共2 / a兲共1 , 1 , 1兲, which can be
leads to a contradiction. The Berry’s phase thus requires viewed as two-dimensional quantum spin-Hall states stacked
that there either be a Dirac point in each half of the Brillouin in the 111 direction.
zone or a Fermi arc enclosing a Dirac point. In Ref. 15, we computed the two-dimensional band struc-
To obtain Eq. 共4.13兲 for spinless electrons, we consider ture for the diamond lattice model in a slab geometry. The
the unitary matrix results displayed the expected surface states, which behave
according to the general principles discussed in Sec. II C.
mij共k兲 = 具ui,−k兩P兩u j,k典, 共4.14兲
which is related to the Berry’s potential via D. Bernevig-Hughes-Zhang model
ⵜk log det关m共k兲兴 = −i关A共k兲 + A共−k兲兴. Equation 共4.13兲 is then After this paper was originally submitted, an interesting
obtained by breaking the line integral into segments connect- proposal appeared for the 2D quantum spin-Hall effect in
ing the time-reversal invariant momenta and using the fact quantum well structures in which a layer of HgTe is sand-
that det关m共k = ⌫i兲兴 = ␦i. wiched between crystals of CdTe.40 Bernevig-Hughes-Zhang
共BHZ兲 showed that for an appropriate range of well thick-
C. Diamond lattice ness, the HgTe layer exhibits an inverted band structure,
where the s and p levels at the conduction- and valence-band
We now consider the tight-binding model on a diamond
edges are interchanged. In this inverted regime, the structure
lattice introduced in Ref. 15. This model exhibits both weak
exhibits a 2D quantum spin-Hall effect. BHZ introduced a
and strong topological insulator phases.
simple four band tight-binding model which captures this
The diamond structure consists of two interpenetrating
effect. Though real HgTe does not have inversion symmetry,
face-centered-cubic lattices displaced from each other by a
their toy model does. In this section, we analyze this model
basis vector d = a共1 , 1 , 1兲 / 4. The primitive translation vectors
and directly evaluate the Z2 topological invariant using Eq.
a1, a2, and a3 are a共0 , 1 , 1兲 / 2, a共1 , 0 , 1兲 / 2, and a共1 , 1 , 0兲 / 2, 共1.1兲.
respectively. Our model has the same form as Eq. 共4.11兲 and BHZ considered a four band model on a square lattice in
includes a nearest-neighbor hopping term as well as a which each site has two s1/2 states 兩s , ↑ 典 and 兩s , ↓ 典 and two of
second-neighbor spin-orbit interaction. the crystal field split p3/2 states 共with m j = ± 3 / 2兲, 兩px
It turns out that with this spin-orbit interaction term, the + ipy , ↑ 典 and 兩px − ipy , ↓ 典. The Hamiltonian is
valence bands and conduction bands meet at 3D Dirac points
at the three inequivalent X points on the 100, 010, and 001
faces of the Brillouin zone. In order to lift the degeneracy
H= 兺 ␣ci†␣ci␣ − ia兺
i,,␣ ␣
†
ta,␣ci+a ␣c i , 共4.16兲
is finite throughout the Brillouin zone. where a gives the angle of nearest-neighbor bond a with the
As in the previous section, the time-reversal invariant mo- x axis.
menta occur at k = ⌫i=共n1n2n3兲 as in Eq. 共2.3兲. At these points, As in Sec. IV A, it is convenient to express this Hamil-
xl ⬅ k · al = nl. At the ⌫ point, k = 0, 共n1n2n3兲 = 共000兲. The tonian in the form of Eq. 共4.7兲 using Dirac matrices which
three inequivalent X points 关at k = 共2 / a兲共1 , 0 , 0兲 and related are even under P̂⌰ ˆ . The form of the parity operator, how-
points兴 have 共n1n2n3兲 = 共011兲, 共101兲, and 共110兲. The four in- ever, is slightly different in this model, and Eq. 共4.2兲 is re-
equivalent L points 关at k = 共 / a兲共1 , 1 , 1兲 and related points兴 placed by
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TABLE III. Parameters for the BHZ model with xk = k · ak. TABLE IV. Symmetry labels for the five valence bands of bis-
muth and antimony at eight time reversal invariant momenta ac-
d0 共s + p兲 / 2 − 共tss − t pp兲共cos x1 + cos x2兲 cording to Ref. 45. The parity eigenvalues can be read from ⫹/⫺
d1 共s − p兲 / 2 − 共tss + t pp兲共cos x1 + cos x2兲 and s / a. Using Eqs 共1.1兲 and 共1.2兲, they determine the topological
class. The indices 共111兲 define a mod 2 vector 关Eq. 共2.13兲 in the
d2 2tsp sin x1
direction of the T point.
d3 0
d4 0 Bismuth
d5 2tsp sin x2 1⌫ ⌫+6 ⌫−6 ⌫+6 ⌫+6 ⌫+45 ⫺
3L Ls La Ls La La ⫺
3X Xa Xs Xs Xa Xa ⫺
P̂ = z 丢 I, 共4.18兲 1T T−6 T+6 T−6 T+6 T−45 ⫺
where z = + 1共−1兲 describes s 共p兲 states. The Dirac matrices Z2 class 共0;000兲
are then the same as Eq. 共4.5兲, except that x and z are
Antimony
interchanged. The coefficients of these new Dirac matrices
1⌫ ⌫+6 ⌫−6 ⌫+6 ⌫+6 ⌫+45 ⫺
for this model are displayed in Table III.
The analysis between Eqs. 共4.6兲 and 共4.10兲 proceeds ex- 3L Ls La Ls La Ls ⫹
actly the same as before, and ␦i = −sgn关d1共k = ⌫i兲兴. We con- 3X Xa Xs Xs Xa Xa ⫺
clude that for k = 共 / a兲共n1 , n2兲, 1T T−6 T+6 T−6 T+6 T−45 ⫺
再
␦i=共n1n2兲 = − sgn
s − p
2
− 共tss + t pp兲关共− 1兲n1 + 共− 1兲n2兴 . 冎 Z2 class 共1;111兲
The conduction band crosses the Fermi energy near the three
共4.19兲 equivalent L points, which reside at the other three-body cen-
For s − p ⬎ 4共tss + t pp兲, all of the ␦i=共n1n2兲 are negative, so that ter zone faces, giving rise to pockets of electrons. At the L
the product = + 1. The system is a simple insulator. In this points, the bottom of the conduction band, which has Ls sym-
regime, the bands have a conventional ordering throughout metry, is only slightly higher in energy than the next lower
the Brillouin zone, with the s states in the conduction band band, which has La symmetry. In antimony,45 the electrons
and the p states in the valence band. For s − p ⱗ 4共tss + t pp兲, are again near the L point. However, unlike bismuth, the
bottom of the conduction band has La symmetry. The holes
the bands near k = 0 become inverted, and ␦i=共00兲 becomes
are not at the T point but, rather, at the lower-symmetry H
positive, signaling a transition into the quantum spin-Hall point.
phase in which = −1. Despite the fact that bismuth and antimony have negative
indirect gaps, the finite direct gap throughout the Brillouin
V. TOPOLOGICAL PHASES IN SPECIFIC MATERIALS zone allows for the topological characterization of the va-
lence energy bands. Since both bismuth and antimony have
In this section, we apply our method for evaluating the
inversion symmetry, we can apply Eqs. 共1.1兲 and 共1.2兲 by
topological invariants to identify specific three-dimensional
reading off the parity eigenvalues n共⌫i兲 from published band
materials that should exhibit a strong topological insulating
phase. structures.44,45 In Table IV, we display the symmetry labels
for the five occupied valence bands at the eight time-reversal
invariant momenta 共⌫i = ⌫, T, and the three equivalent L and
A. Bismuth-antimony alloy
X points兲. The parity eigenvalue n共⌫i兲 can be read from the
Bi and Sb are group-V semimetals in which there is a superscripts ⫾ or the subscripts s / a = + / −. 共For an explana-
finite direct energy gap throughout the Brillouin zone but a tion of this notation, see Ref. 46兲. The right column displays
negative indirect gap due to band overlap. They have very the product ␦i from Eq. 共1.1兲. Based on these data, we con-
close lattice parameters and form the solid alloy clude that the valence band of bismuth is equivalent to that
Bi1−xSbx.42,43 For 0.07⬍ x ⬍ 0.22, the indirect gap becomes of a conventional insulator, while the valence band of anti-
positive, leading to semiconducting behavior, with a maxi- mony is that of a strong topological insulator. The difference
mum energy gap of order 30 meV for x = 0.18. In this sec- between the two is due to the inversion between the Ls and
tion, we will argue, based on the known band structure of La bands.
these materials, that this alloy is a strong topological insula- The evolution of the band structure of the alloy Bi1−xSbx
tor, which will have topological metal surface states. as a function of x has been well studied42,43,47 and is summa-
Bulk bismuth and antimony have the rhombohedral A7 rized in Fig. 5. As the Sb concentration is increased, two
structure, which consists of two interpenetrating, face- things happen. First, the gap between the Ls and La bands
centered-cubic lattices which are displaced in the 111 direc- decreases. At x = 0.04, the bands cross and the gap reopens
tion and slightly distorted in the 111 direction. In with the inverted ordering. Second, the top of the valence
bismuth,44,45 the valence band crosses the Fermi energy in band at T comes down in energy and crosses the bottom of
the vicinity of the T point, which is located on the 111 face the conduction band at x = 0.07. At this point, the indirect gap
of the Brillouin zone, giving rise to a small pocket of holes. becomes positive, and the alloy is a semiconductor. At x
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TOPOLOGICAL INSULATORS WITH INVERSION SYMMETRY PHYSICAL REVIEW B 76, 045302 共2007兲
= 0.09 the T valence band clears the Ls valence band, and the degenerate set of states with ⌫+8 symmetry, which can be
alloy is a direct-gap semiconductor at the L points. As x is derived from p states with total angular momentum j = 3 / 2.
increased further, the gap increases until its maximum value The fourfold degeneracy at the ⌫+8 point is a consequence of
of order 30 meV at x = 0.18. At that point, the valence band at the cubic symmetry of the diamond lattice. Applying uniaxial
H crosses the Ls valence band. For x ⬎ 0.22, the H band strain lifts this degeneracy into a pair of Kramers doublets
crosses the La conduction band, and the alloy is again a and introduces an energy gap into the spectrum.53 For pres-
semimetal. sures of order 3 ⫻ 109 dyn/ cm2, the induced energy gap is of
Since the inversion transition between the Ls and La bands order 40 meV. We now argue that this insulating phase is, in
occurs in the semimetal phase adjacent to pure bismuth, it is fact, a strong topological insulator.
clear that the semiconducting Bi1−xSbx alloy inherits its to- Table V shows the symmetry labels for unstrained ␣-Sn
pological class from pure antimony and is thus a strong to- associated with the four occupied valence bands at the eight
pological insulator. Of course, this conclusion is predicated time-reversal invariant momenta.54 Uniaxial strain lowers the
on a “virtual-crystal approximation⬙ in which the disorder symmetry, so the cubic symmetry labels no longer apply.
due to the random mixture is ignored, so that inversion sym- However, since the strain does not violate inversion symme-
metry is preserved in the alloy. However, since this inherent try, the parity eigenvalues are unchanged. The only effect is
disorder does not destroy the bulk energy gap, it is unlikely to split the degeneracy of the ⌫+8 level into two sets of even-
to change the topological class, which does not require in- parity Kramers doublets 关see Fig. 6共b兲兴. In Table V, ⌫+* 8 re-
version 共or translation兲 symmetry. We thus conclude that in- fers to the occupied doublet. Based on the parity eigenvalues,
trinsic Bi1−xSbx, despite its bulk energy gap, will have con- we conclude that strained gray tin is a strong topological
ducting surface states, which form a topological metal. insulator.
Semiconducting Bi1−xSbx alloys have been studied experi- HgTe is a II-VI material with the zinc-blende
mentally because of their thermoelectric properties, which structure.52,55 It is a zero gap semiconductor with an elec-
make them desirable for applications as thermo- tronic structure closely related to gray tin. The Fermi energy
couples.43,48–50 Transport studies have been carried out both is in the middle of the fourfold degenerate ⌫8 states, whose
on bulk samples43 and epitaxial thin films.49 For T ⬎ 50 K, degeneracy follows from the cubic symmetry of the zinc-
semiconducting behavior is observed, while at lower tem- blende lattice. As in gray tin, uniaxial strain lifts this degen-
peratures, the resistivity saturates at a value in the range eracy and opens a gap at the Fermi energy.
5 – 50 ⍀m. This observed residual resistivity is probably Though HgTe lacks inversion symmetry, we now argue
too small to be explained by surface states. It has been at- based on adiabatic continuity that the gap induced by
tributed to residual charged impurities,43 which act as shal- uniaxial strain leads to a strong topological insulator. The
low donors, making the alloy slightly n type. In order to electronic structure of II-VI materials can be understood by
separate the surface properties from the bulk transport, it will adding an inversion symmetry-breaking perturbation to a in-
be necessary either to improve the purity of the samples or version symmetric group-IV crystal.52,56 Provided that this
perhaps use gating in a heterostructure to push the Fermi perturbation does not lead to any level crossings at the Fermi
energy into the gap. energy, we can conclude that the II-IV material is in the same
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LIANG FU AND C. L. KANE PHYSICAL REVIEW B 76, 045302 共2007兲
TABLE VI. Symmetry labels for the five valence bands of tin
telluride and lead telluride at eight time-reversal invariant momenta,
according to Ref. 59.
Tin Telluride
1⌫ ⌫+6 ⌫+6 ⌫−6 2⌫+8 ⫺
3X X+6 X+6 X−6 X−6 X−7 ⫺
4L L−6 L+6 L+6 L+45 L−6 ⫹
Z2 class 共0;000兲
Lead telluride
1⌫ ⌫+6 ⌫+6 ⌫−6 2⌫+8 ⫺ FIG. 7. Schematic uniaxial strain-composition phase diagram
3X X+6 X+6 X−6 X−6 X−7 ⫺ for Pb1−xSnxTe. Away from the inversion transition at x ⬃ 0.4, the
material is a conventional insulator 共I兲. Near the transition, it is a
4L L−6 L+6 L+6 L+45 L+6 ⫺
strong topological insulator 共STI兲.
Z2 class 共0;000兲
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TOPOLOGICAL INSULATORS WITH INVERSION SYMMETRY PHYSICAL REVIEW B 76, 045302 共2007兲
D. Other materials must be low: T Ⰶ Eg / log共W / a兲, where a is the lattice con-
The materials we have proposed above should not be con- stant. Moreover, since the materials we have suggested have
sidered to be an exhaustive list. In general, it is necessary to rather small energy gaps, samples with high purity will be
consider insulators composed of heavy elements. Another required to reach the intrinsic limit. As discussed in Sec.
candidate for a topological insulating phase is Bi2Te3, which, IV A, the low-temperature behavior of Bi1−xSbx is dominated
like Bi1−xSbx, is known for its thermoelectric properties.61 by a low concentration of charged impurities, which form an
This material is also a narrow gap semiconductor, with an impurity band.43 This is a ubiquitous problem for narrow gap
energy gap of order 0.13 eV. Though the crystal structure of semiconductors due to their low effective mass and high di-
this material is inversion symmetric, we have been unable to electric constant. Clearly, it would be desirable to have a
locate band theory calculations which display the parity ei- transport geometry which probes the surface states while
genvalues. controlling the position of the bulk Fermi energy. Perhaps,
Another possible candidate is the zinc-blende semicon- this may be possible in a clever heterostructure geometry,
ductor  − HgS. The electronic structure of this material has where the bulk Fermi energy can be adjusted with a gate.
been a subject of some controversy. According to Delin,62 it An alternative probe of the surface states would be to map
is a semiconductor which has an unusual band ordering, with the surface Fermi arc using angle-resolved photoemission.
the ⌫6 and ⌫8 levels in the valence band and the ⌫7 level in Such measurements could establish that the surface Fermi
the conduction band. If this is the case, we expect the mate- arc encloses an odd number of time-reversal invariant mo-
rial to be a strong topological insulator. However, this con- menta in the strong topological insulator phase. Detailed
clusion has been challenged by Moon and Wei,63 who find a angle-resolved photoemission spectroscopy studies have
more conventional band ordering with the ⌫6 level in the been carried out on the surfaces of bismuth67–69 and
conduction band and the ⌫7 and ⌫8 levels in the valence antimony.70 However, the presence of the bulk Fermi surface
band, leading to a conventional insulator. complicates the analysis of these materials. It would be in-
teresting to see how the results are modified in the semicon-
ducting Bi1−xSbx alloy.
VI. EXPERIMENTAL IMPLICATIONS Finally, since the surface states are spin filtered, electrical
currents flowing on the surface will be associated with spin
We now briefly consider possible experimental probes of accumulation, leading to a spin-Hall effect. In GaAs, spin
topological insulators. We will focus here on the three- accumulation on a surface has been measured.71,72 The nar-
dimensional strong topological insulator phase, for which we row energy gaps in our proposed materials make detection of
suggested several materials in the previous section. the spin accumulation more difficult. Perhaps, a heterostruc-
The most direct probe of the topological insulators is ture geometry could make this possible.
transport. Since there is a bulk excitation gap, transport in
intrinsic samples at very low temperature will be dominated
VII. CONCLUSION
by the surfaces, which can be probed by the geometry de-
pendence of the conductance. For example, for a wire geom- In this paper, we discussed topological insulator phases in
etry, the conductance will be proportional to the circumfer- two and three dimensions. We discussed in detail how the Z2
ence of the wire, rather than the area. topological invariants characterizing these phases influence
In addition, since the topological metal phase is in the the surface-state spectrum. In particular, the quantum spin-
symplectic universality class the conductivity is expected to Hall phase in two dimensions and the strong topological in-
increase logarithmically at low temperature: 共T兲 sulator in three dimensions have robust conducting surface
⬀ log关Lin共T兲 / ᐉ兴,64 where Lin is the inelastic scattering length states, which we have characterized as a topological metal.
and ᐉ is the mean free path. We showed that the Z2 invariants can be determined easily in
An interesting prediction for the surface states is that due parity invariant crystals from the knowledge of the parity
the Berry’s phase associated with the surface Fermi arc, eigenvalues for states at the time-reversal invariant points in
the surface quantum Hall effect in a perpendicular magnetic the Brillouin zone. Using this method, we deduced that the
field should be quantized in half odd integers, xy = 共n semiconducting alloy Bi1−xSbx is a strong topological insula-
+ 1 / 2兲e2 / h. As discussed in Sec. II C 1, this is difficult to tor, as are ␣-Sn and HgTe in the presence of uniaxial strain.
measure directly without separately measuring the currents There remain a number of further issues which need to be
flowing on the top and bottom surfaces of the sample. How- understood better. High among them are the effects of disor-
ever, if the parallel combination of the two surfaces could be der and interactions. These are important both for the topo-
measured, the resulting Hall effect would be quantized in logical metal surface states as well as for the bulk topological
odd multiples of e2 / h. This is similar to the quantum Hall phases. Numerical work by Onoda et al.73 has suggested that
effect in graphene,65,66 which is quantized in odd multiples the transition between the conventional insulator and the
of 2e2 / h. The difference is due to the fact that graphene has quantum spin-Hall phase in two dimensions belongs to a new
four Dirac points, including spin. universality class. It will be of interest to understand this
A practical difficulty with transport measurements is that transition better, along with the related transition between the
it is necessary to distinguish surface currents from bulk cur- topological insulator and the Anderson insulator, which pre-
rents. Since bulk currents scale with the sample width W, sumably occurs when disorder is increased beyond a critical
even though there is a bulk energy gap Eg, the temperature value.
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LIANG FU AND C. L. KANE PHYSICAL REVIEW B 76, 045302 共2007兲
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